公开(公告)号：US20230261099A1

公开(公告)日：2023-08-17

申请号：US18005058

申请日：2021-06-18

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： KAZUKI KISHIDA ,  KATSUHIKO TAKEUCHI

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/66 ,  H01L29/423

CPC分类号： H01L29/7786 ,  H01L29/1045 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/2003

摘要： A semiconductor device including: a channel layer; a barrier layer; a source electrode and a drain electrode; a gate electrode; a side surface opening region; and a low-Ns region. The channel layer includes a first nitride semiconductor. The barrier layer includes a second nitride semiconductor. The barrier layer is provided on the channel layer. The source electrode and the drain electrode are provided above the barrier layer. The gate electrode is provided above the barrier layer between the source electrode and the drain electrode. The side surface opening region is at least provided on one of side surfaces of the gate electrode between the source electrode or the drain electrode and the gate electrode. The low-Ns region is provided in the channel layer in correspondence with a planar region provided with the gate electrode and the side surface opening region. The low-Ns region has lower carrier density than carrier density of another region of the channel layer.