公开(公告)号：US20170053961A1

公开(公告)日：2017-02-23

申请号：US15342081

申请日：2016-11-02

Applicant: Sony Corporation

Inventor： Toshihiko Hayashi

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469

Abstract: Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

Abstract translation: 本文公开了一种固态成像装置，其包括：层叠半导体芯片，其被配置为通过将两个或更多个半导体芯片部彼此接合而获得，并且可以通过至少接合第一半导体芯片部分获得，所述第一半导体芯片部分中的像素阵列和多层 形成布线层，其中以多层布线层彼此相对并彼此电连接的方式彼此形成逻辑电路和多层布线层的第二半导体芯片部分; 以及遮光层，被配置为由与第一和第二半导体芯片部分之间接近接合的第一和第二半导体芯片部分之一或两者的连接互连层的相同层的导电膜形成。 固态成像装置是背照式固态成像装置。

公开(公告)号：US09171875B2

公开(公告)日：2015-10-27

申请号：US14168524

申请日：2014-01-30

Applicant: Sony Corporation

Inventor： Toshihiko Hayashi

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469

Abstract: Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

Abstract translation: 本文公开了一种固态成像装置，其包括：层叠半导体芯片，其被配置为通过将两个或更多个半导体芯片部彼此接合而获得，并且可以通过至少接合第一半导体芯片部分而获得，其中，第一半导体芯片部分中的像素阵列和多层 形成布线层，其中以多层布线层彼此相对并彼此电连接的方式彼此形成逻辑电路和多层布线层的第二半导体芯片部分; 以及遮光层，被配置为由与第一和第二半导体芯片部分之间接近接合的第一和第二半导体芯片部分之一或两者的连接互连层的相同层的导电膜形成。 固态成像装置是背照式固态成像装置。

公开(公告)号：US09082898B2

公开(公告)日：2015-07-14

申请号：US14035624

申请日：2013-09-24

Applicant: Sony Corporation

Inventor： Toshihiko Hayashi ,  Yoshiharu Kudoh

IPC: H01L31/062 ,  H01L31/0216 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/18

Abstract: A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.

Abstract translation: 固态成像装置包括：被配置为形成在半导体衬底上的受光像素部分; 配置为形成在所述半导体衬底上的黑色级参考像素部分; 以及被构造成设置在所述半导体衬底上的多层互连部件。 多层互连部分包括形成在半导体衬底上的绝缘层和在绝缘层中形成为多层的金属互连层。 多层互连部分具有形成在第一金属互连层的第一金属互连之间的区域上方的第一遮光膜，作为黑色等级参考像素部分上方的金属互连层之一，以及第二遮光膜， 连接到第一遮光膜并且由第一金属互连层上的第二金属互连层形成。

公开(公告)号：US20130207215A1

公开(公告)日：2013-08-15

申请号：US13745101

申请日：2013-01-18

Applicant: Sony Corporation

Inventor： Yoichi Otsuka ,  Yoshiyuki Enomoto ,  Kazunori Nagahata ,  Tadayuki Kimura ,  Toshihiko Hayashi ,  Kenichi Aoyagi ,  Kiyotaka Tabuchi ,  Iwao Sugiura ,  Kensaku Maeda

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  G02B5/201 ,  G02B5/223 ,  H01L27/14621 ,  H01L27/14685

Abstract: A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).

公开(公告)号：US11342371B2

公开(公告)日：2022-05-24

申请号：US16945247

申请日：2020-07-31

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai ,  Hiroyuki Itou ,  Suguru Saito ,  Keiji Ohshima ,  Masanori Iwasaki ,  Toshihiko Hayashi ,  Shuzo Sato ,  Nobutoshi Fujii ,  Hiroshi Tazawa ,  Toshiaki Shiraiwa ,  Minoru Ishida

IPC: H01L27/146 ,  B29D11/00 ,  G02B13/00 ,  G02B1/11

Abstract: A deformation of a stacked lens is suppressed.
A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：US10600838B2

公开(公告)日：2020-03-24

申请号：US15118575

申请日：2015-04-15

Applicant: SONY CORPORATION

Inventor： Satoru Wakiyama ,  Naoki Jyo ,  Kan Shimizu ,  Toshihiko Hayashi ,  Takuya Nakamura

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48

Abstract: There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

公开(公告)号：US10431618B2

公开(公告)日：2019-10-01

申请号：US15567289

申请日：2016-07-15

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai ,  Hiroyuki Itou ,  Suguru Saito ,  Keiji Ohshima ,  Masanori Iwasaki ,  Toshihiko Hayashi ,  Shuzo Sato ,  Nobutoshi Fujii ,  Hiroshi Tazawa ,  Toshiaki Shiraiwa ,  Minoru Ishida

IPC: H01L27/146 ,  B29D11/00 ,  G02B13/00 ,  G02B1/11

Abstract: A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：US09496307B2

公开(公告)日：2016-11-15

申请号：US14867476

申请日：2015-09-28

Applicant: Sony Corporation

Inventor： Toshihiko Hayashi

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469

Abstract: Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

公开(公告)号：US10818717B2

公开(公告)日：2020-10-27

申请号：US16564444

申请日：2019-09-09

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai ,  Hiroyuki Itou ,  Suguru Saito ,  Keiji Ohshima ,  Masanori Iwasaki ,  Toshihiko Hayashi ,  Shuzo Sato ,  Nobutoshi Fujii ,  Hiroshi Tazawa ,  Toshiaki Shiraiwa ,  Minoru Ishida

IPC: H01L27/146 ,  B29D11/00 ,  G02B13/00 ,  G02B1/11

Abstract: A deformation of a stacked lens is suppressed.A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：US20200219924A1

公开(公告)日：2020-07-09

申请号：US16824055

申请日：2020-03-19

Applicant: Sony Corporation

Inventor： Toshihiko Hayashi

IPC: H01L27/146

Abstract: Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.