公开(公告)号：US20240011193A1

公开(公告)日：2024-01-11

申请号：US18041554

申请日：2021-08-19

申请人： SOCPRA SCIENCES ET GENIE S.E.C.

发明人： Youcef Ataellah BIOUD ,  Abderraouf BOUCHERIF ,  Richard ARÈS

IPC分类号： C30B33/10 ,  H01L21/02 ,  C30B29/08 ,  C30B33/02 ,  C30B31/22 ,  C25F3/12

CPC分类号： C30B33/10 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  C30B29/08 ,  C30B33/02 ,  C30B31/22 ,  C25F3/12

摘要： There is described a method of manufacturing a substrate for an optoelectronic device. The method has the steps of: supporting a first layer of a first crystalline material on a second layer of a second crystalline material different from said first crystalline material thereby exposing crystalline defects at a surface of said first layer; etching said first layer using first etching conditions, at least some of said crystalline defects expanding into pores running from said surface of the first layer towards said second layer; and heating said first and second layers up to a first temperature for a first period of time within a given environment, said heating transforming said pores into nanovoids attracting at least some of said crystalline defects away from said surface. In some embodiments, the method has a step of reheating the layers or a step of forming a pore containing region within the first layer.

公开(公告)号：US20240093403A1

公开(公告)日：2024-03-21

申请号：US18264975

申请日：2022-02-10

申请人： SOCPRA SCIENCES ET GENIE S.E.C.

发明人： Mohammad Reza AZIZIYAN ,  Ionela-roxana ARVINTE ,  Abderraouf BOUCHERIF ,  Richard ARÈS

IPC分类号： C30B25/20 ,  C30B25/10 ,  C30B25/18 ,  C30B29/08 ,  C30B33/02

CPC分类号： C30B25/20 ,  C30B25/10 ,  C30B25/186 ,  C30B29/08 ,  C30B33/02

摘要： There is described a method of manufacturing an optoelectronic device. The method generally has: etching a wafer of monocrystalline germanium, said etching forming a given density of pores contained within said monocrystalline germanium, with at least some of said pores being exposed at a surface of said wafer; depositing a substrate layer of a given crystalline material onto said surface, said substrate layer closing exposed ones of said pores; heating said wafer and said substrate layer, said heating transforming said pores into cavity-interspersed pillars interconnected to one another within said wafer; making a semiconductor component integral to said substrate layer, including collectively forming said optoelectronic device; and breaking said cavity-interspersed pillars of said wafer thereby freeing said optoelectronic device from a remaining wafer portion of said wafer.