公开(公告)号：US20230298677A1

公开(公告)日：2023-09-21

申请号：US17847056

申请日：2022-06-22

Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

Inventor： Sunyoung JO ,  Jungwuk PARK ,  Younghyun PARK ,  Sang Ho YUN ,  Jaekyun MOON

IPC: G11C16/34 ,  G11C16/28 ,  G06N3/04

CPC classification number: G11C16/3431 ,  G06N3/0454 ,  G11C16/28

Abstract: A device includes a threshold voltage distribution estimation network configured to generate an estimated distribution using a feature distribution and read trial information, a set of feature distributions generated from a plurality of threshold voltage distributions for a plurality of pages of a memory device, and a read reference voltage estimation network configured to generate a read reference voltage from the estimated distribution. The read trial information includes a read trial vector and an output value, the output value being generated by applying the read trial vector to a threshold voltage distribution for a page to be read among the plurality of threshold voltage distributions.