公开(公告)号：US20160358658A1

公开(公告)日：2016-12-08

申请号：US15173357

申请日：2016-06-03

申请人： SK hynix Inc.

发明人： Giulio Martinozzi ,  Min Sang PARK ,  Sang Jo LEE

IPC分类号： G11C16/10 ,  G06F3/06

CPC分类号： G11C16/10 ,  G06F3/0604 ,  G06F3/0632 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/32

摘要： A method is provided for programming a non-volatile memory having a plurality of word lines, the method comprising: applying a pass voltage to a selected word line among the plurality of word lines; and applying one of first and second program voltages to the selected word line by increasing the pass voltage, wherein the applying of one of the first and second program voltages increases the pass voltage with a single increment.

摘要翻译： 提供了一种用于对具有多个字线的非易失性存储器进行编程的方法，所述方法包括：对所述多个字线中的选定字线施加通过电压; 以及通过增加通过电压将第一和第二编程电压中的一个施加到所选择的字线，其中施加第一和第二编程电压中的一个以单个增量增加通过电压。

公开(公告)号：US11922167B2

公开(公告)日：2024-03-05

申请号：US18173782

申请日：2023-02-24

申请人： SK hynix Inc.

发明人： Giulio Martinozzi ,  Federica Arosio ,  Lorenzo Di Lalla

IPC分类号： G06F9/30

CPC分类号： G06F9/30069 ,  G06F9/30054 ,  G06F9/30058 ,  G06F9/30076 ,  G06F9/30145 ,  G06F9/30181

摘要： Disclosed herein is a method for managing of NOP instructions in a microcontroller, the method comprising duplicating all jump instructions causing a NOP instruction to form a new instruction set; inserting an internal NOP instruction into each of the jump instructions; when a jump instruction is executed, executing a subsequent instruction of the new instruction set; and executing the internal NOP instruction when an execution of the subsequent instruction is skipped.

公开(公告)号：US11614938B2

公开(公告)日：2023-03-28

申请号：US17465654

申请日：2021-09-02

申请人： SK hynix Inc.

发明人： Giulio Martinozzi ,  Federica Arosio ,  Lorenzo Di Lalla

IPC分类号： G06F9/30 ,  G05B19/042

摘要： Disclosed herein is a method for managing of NOP instructions in a microcontroller, the method comprising duplicating all jump instructions causing a NOP instruction to form a new instruction set; inserting an internal NOP instruction into each of the jump instructions; when a jump instruction is executed, executing a subsequent instruction of the new instruction set; and executing the internal NOP instruction when an execution of the subsequent instruction is skipped.

公开(公告)号：US10037805B2

公开(公告)日：2018-07-31

申请号：US15173357

申请日：2016-06-03

申请人： SK hynix Inc.

发明人： Giulio Martinozzi ,  Min Sang Park ,  Sang Jo Lee

IPC分类号： G11C11/34 ,  G11C16/10 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04 ,  G11C16/32

CPC分类号： G11C16/10 ,  G06F3/0604 ,  G06F3/0632 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/32

摘要： A method is provided for programming a non-volatile memory having a plurality of word lines, the method comprising: applying a pass voltage to a selected word line among the plurality of word lines; and applying one of first and second program voltages to the selected word line by increasing the pass voltage, wherein the applying of one of the first and second program voltages increases the pass voltage with a single increment.