MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING AND REPRODUCING APPARATUS, AND METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM

    公开(公告)号:US20220246176A1

    公开(公告)日:2022-08-04

    申请号:US17649588

    申请日:2022-02-01

    申请人: SHOWA DENKO K.K.

    IPC分类号: G11B5/667 G11B5/851

    摘要: A magnetic recording medium including: a non-magnetic substrate; an underlayer; a perpendicular magnetic layer; a diffusion preventing layer; and a protective layer, wherein the underlayer, the perpendicular magnetic layer, the diffusion preventing layer, and the protective layer are layered on the non-magnetic substrate in this order, the perpendicular magnetic layer has a multi-layer structure, the perpendicular magnetic layer includes an uppermost layer and at least one layer other than the uppermost layer, the uppermost layer including Co or Fe in magnetic particles, and the at least one layer other than the uppermost layer including an oxide, the diffusion preventing layer is provided between the perpendicular magnetic layer and the protective layer, and the diffusion preventing layer includes at least one component selected from a group consisting of Si, Ti, Cr, B, and Ru, or either a carbide, an oxide, or both, of the at least one component.

    METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM

    公开(公告)号:US20230131031A1

    公开(公告)日:2023-04-27

    申请号:US18146647

    申请日:2022-12-27

    申请人: SHOWA DENKO K.K.

    IPC分类号: G11B5/667 G11B5/851

    摘要: A method of manufacturing a magnetic recording medium including: forming a diffusion preventing layer, wherein the magnetic recording medium includes a non-magnetic substrate; an underlayer; a perpendicular magnetic layer; the diffusion preventing layer; and a protective layer, wherein the perpendicular magnetic layer has a multi-layer structure, the perpendicular magnetic layer includes an uppermost layer and at least one layer other than the uppermost layer, the uppermost layer including Co or Fe in magnetic particles, and the at least one layer other than the uppermost layer including an oxide, the diffusion preventing layer is provided between the perpendicular magnetic layer and the protective layer, and the diffusion preventing layer includes at least one component selected from a group consisting of Si, Ti, Cr, B, and Ru, or either a carbide, an oxide, or both, of the at least one component.

    HEAT-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS

    公开(公告)号:US20200005821A1

    公开(公告)日:2020-01-02

    申请号:US16445801

    申请日:2019-06-19

    申请人: SHOWA DENKO K.K.

    IPC分类号: G11B5/65

    摘要: A heat-assisted magnetic recording medium includes: a substrate; an underlayer; and a magnetic layer that is (001)-oriented. In the magnetic layer, a first magnetic layer and a second magnetic layer are stacked in this order from the underlayer side. The first magnetic layer and the second magnetic layer include an alloy having an L10 structure. The second magnetic layer includes a ferrite at grain boundaries of magnetic grains. The ferrite is one or more kinds selected from the group consisting of NiFe2O4, MgFe2O4, MnFe2O4, CuFe2O4, ZnFe2O3, CoFe2O4, BaFe2O4, SrFe2O4, and Fe3O4. A Curie temperature of the magnetic grains is lower than a Curie temperature of the ferrite.

    HEAT-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS

    公开(公告)号:US20190392860A1

    公开(公告)日:2019-12-26

    申请号:US16433377

    申请日:2019-06-06

    申请人: SHOWA DENKO K.K.

    IPC分类号: G11B5/31 G11B5/48 G11B5/65

    摘要: A heat-assisted magnetic recording medium includes: a substrate; an underlayer; and a magnetic layer including an alloy having an L10 structure, wherein the underlayer includes, from the substrate side, a bcc underlayer including a substance having a bcc structure, a first oxide layer that is in contact with the bcc underlayer, and a second oxide layer that is in contact with the magnetic layer. The bcc underlayer, the first oxide layer, and the second oxide layer are stacked in the recited order. The first oxide layer and the second oxide layer include magnesium oxide, and the second oxide layer further includes one or more compounds selected from the group consisting of vanadium oxide, vanadium nitride, and vanadium carbide.