公开(公告)号：US20230312351A1

公开(公告)日：2023-10-05

申请号：US18004342

申请日：2021-06-07

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Akihiro HIRATE ,  Waichi YAMAMURA

IPC分类号： C01B32/21 ,  C23C16/32

CPC分类号： C01B32/21 ,  C23C16/32 ,  C01P2002/54

摘要： A carbide-coated carbon material including a base material containing carbon as a main component and chlorine, and a carbide layer containing a carbide as a main component and chlorine, the carbide layer being disposed on the base material. The base material has, near an interface between the base material and the carbide layer, a base material buffer region where a chlorine concentration continuously changes in a direction toward the carbide layer. The carbide layer has, near the interface between the base material and the carbide layer, a carbide layer buffer region where the chlorine concentration continuously changes in a direction toward the base material. The carbide-coated carbon material has sufficient adhesion strength in the interface between the carbide layer and the base material containing carbon as a main component.

公开(公告)号：US20210140067A1

公开(公告)日：2021-05-13

申请号：US17149733

申请日：2021-01-15

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Chikara MORI ,  Waichi YAMAMURA ,  Shoji KANO ,  Akihiro HIRATE

IPC分类号： C30B29/36 ,  C04B41/00 ,  C30B25/08 ,  C04B41/87 ,  C30B23/00 ,  C30B25/12 ,  C04B41/50 ,  C23C16/32 ,  C23C16/56

摘要： A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

公开(公告)号：US20190169768A1

公开(公告)日：2019-06-06

申请号：US16208482

申请日：2018-12-03

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Chikara MORI ,  Waichi YAMAMURA ,  Shoji KANO ,  Akihiro HIRATE

IPC分类号： C30B29/36 ,  C04B41/50 ,  C23C16/32 ,  C23C16/56

摘要： A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.