-
公开(公告)号：US08829523B2
公开(公告)日：2014-09-09
申请号：US14071284
申请日：2013-11-04
Inventor： Shijian Qin , Chengming He
IPC: H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376 , H01L29/786 , H01L29/66
CPC classification number: H01L29/66765 , H01L29/78618
Abstract: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost.
Abstract translation: 本发明提供薄膜晶体管（TFT）制造方法和TFT，TFT的源电极或漏电极在成形过程中直接与数据线电连接，在数据线上方的表面上设置通孔 的TFT，以节省工艺成本。 此外，TFT的源电极和漏电极也用多晶硅而不是现有技术中使用的金属材料制造，简化了处理步骤，从而进一步节省了工艺成本。
-
公开(公告)号：US20140057400A1
公开(公告)日：2014-02-27
申请号：US14071284
申请日：2013-11-04
Inventor： Shijian Qin , Chengming He
IPC: H01L29/66
CPC classification number: H01L29/66765 , H01L29/78618
Abstract: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost.
Abstract translation: 本发明提供薄膜晶体管（TFT）制造方法和TFT，TFT的源电极或漏电极在成形过程中直接与数据线电连接，在数据线上方的表面上设置通孔 的TFT，以节省工艺成本。 此外，TFT的源电极和漏电极也用多晶硅而不是现有技术中使用的金属材料制造，简化了处理步骤，从而进一步节省了工艺成本。
-
公开(公告)号：US20150226487A1
公开(公告)日：2015-08-13
申请号：US14235797
申请日：2014-01-13
Inventor： Shijian Qin
CPC classification number: F27D19/00 , F27B9/36 , F27B9/40 , F27D5/0037 , F27D11/02 , F27D11/12 , F27D21/00 , F27D21/0014 , F27D2019/0003 , H01L21/67109 , H01L21/67115 , H01L21/67248
Abstract: The present disclosure provides a substrate heating device, including a heating furnace, a platform arranged in the heating furnace with a to-be-heated substrate placed thereon, a plurality of spaced heaters arranged on the substrate for heating the substrate, a plurality of reflectors respectively arranged above the heaters, and a plurality of rotation controllers arranged on an inner side of the heating furnace for controlling rotations of the reflectors. With the present disclosure, the temperature of the substrate can be uniform to achieve accurate control of the uniformity of the temperature of the substrate.
Abstract translation: 本公开提供了一种基板加热装置，包括加热炉，布置在加热炉中的待加热基板的平台，布置在基板上用于加热基板的多个间隔开的加热器，多个反射器 分别布置在加热器上方，以及多个旋转控制器，其布置在加热炉的内侧，用于控制反射器的旋转。 通过本公开，基板的温度可以是均匀的，以实现基板的温度均匀性的精确控制。
-
公开(公告)号：US10090414B2
公开(公告)日：2018-10-02
申请号：US15513562
申请日：2017-02-13
Inventor： Macai Lu , Jiangbo Yao , Shijian Qin
IPC: H01L21/84 , H01L29/786 , H01L29/51 , H01L21/02 , H01L29/423
Abstract: The present invention provides a TFT (Thin Film Transistor) substrate manufacture method, which includes forming a TFT gate electrode on a substrate, sequentially forming a first insulation layer, an active layer, a source electrode, and a drain electrode, and then forming a second insulation layer and coating a photoresist thereon, defining a pixel electrode pattern, forming a drain VIA hole on the second insulation layer, depositing a pixel electrode layer after preparing suede on the photoresist, and permeating the suede with a stripping liquid to remove the photoresist and the pixel electrode layer on the photoresist so as to form a pixel electrode connecting to the drain electrode via the drain VIA hole.
-
-
-
Search Results
4
records
(took 0.017 seconds)
