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公开(公告)号：US20220383462A1
公开(公告)日：2022-12-01
申请号：US17586045
申请日：2022-01-27
IPC分类号： G06T5/50 , G06V10/75 , G06T7/521 , G06T7/80 , H04N5/247 , G06T7/00 , G06T5/00 , G01S17/894 , G01S17/42
摘要： The present invention provides a method for correcting an anomalous pixel and an apparatus. The method for correcting the anomalous pixel comprises: calculating a matching index of pixels in a first point cloud map and a second point cloud map; finding out an anomalous pixel based on the matching index of the pixels and a correction threshold; and calculating a correction column difference, and correcting the anomalous pixel based on the correction column difference and the matching index of the pixels. The anomalous pixel in the point cloud map is retained and corrected, thus the pixel integrity of an image is guaranteed; and a mode for correcting the anomalous pixel is simple, requires fewer calculating steps, and exhibits high anomalous pixel correction efficiency. The apparatus provided by the present invention comprises a first camera, a second camera, an image processing unit, an indexing unit, a calculating unit, a judging unit, and a correction execution unit, and is used for improving the efficiency of correcting an anomalous pixel in an image.
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公开(公告)号：US20240230862A1
公开(公告)日：2024-07-11
申请号：US17925903
申请日：2021-11-11
CPC分类号： G01S7/497 , H04N23/811 , G01S2007/4975
摘要： Embodiments of the present invention provide a dual-modality bionic vision sensor. A first-type current-mode active pixel sensor (APS) circuit can simulate excitatory rod cells to perceive light intensity gradient information in a target light signal, thereby improving a dynamic arrange of an image sensed by a bionic vision sensor and its shooting speed. In addition, a first-type control switch is introduced for each of non-target first-type photosensitive devices to control the obtained light intensity gradient information, and to adjust the dynamic arrange of the image sensed by the bionic vision sensor, thereby adjusting the shooting speed and realizing a reconfigurable effect. A voltage-mode APS can simulate cone cells to output a target voltage signal representing light intensity information in the target light signal, and to perceive the light intensity information in the target light signal. In this way, the obtained light intensity information represented by the target voltage signal has a higher precision, thereby ensuring the image quality.
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公开(公告)号：US20240223896A1
公开(公告)日：2024-07-04
申请号：US17924041
申请日：2022-02-18
IPC分类号： H04N23/67 , G06T7/571 , G06T7/90 , H04N23/959
CPC分类号： H04N23/67 , G06T7/571 , G06T7/90 , H04N23/959 , G06T2207/10004
摘要： The present invention provides a camera focusing method, including: making an imaging plane of a time-of-flight (ToF) camera and that of a red-green-blue (RGB) camera located in a common plane, obtaining a pixel column difference, a pixel matching table, and a corresponding area, calculating an average depth value of the corresponding area, calculating an adjustment distance according to the average depth value and a lens focal length, and adjusting a distance between a lens center and the imaging plane according to the adjustment distance to focus the cameras and improve a focusing speed. The present invention further provides a camera focusing system for implementing the camera focusing method.
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公开(公告)号：US20230033445A1
公开(公告)日：2023-02-02
申请号：US17583419
申请日：2022-01-25
摘要： The present invention provides a method and system for processing an image. The method comprises: acquiring high-frame data and low-frame data of a target object, and acquiring initial exposure time to complete the high-frame data and the low-frame data; calculating a proportion of overexposed pixel points and a proportion of underexposed pixel points in the low-frame data; adjusting the initial exposure time according to a magnitude of the proportion of the overexposed pixel points and a magnitude of the proportion of the underexposed pixel points to obtain target exposure time; and acquiring target high-frame data and target low-frame data according to the target exposure time, and replacing overexposed pixel points in the target high-frame data with pixel points of the target low-frame data. The initial exposure time is adjusted according to the proportion of the overexposed pixel points to obtain the target exposure time, the target high-frame data and the target low-frame data are acquired according to the target exposure time, and the overexposed pixel points in the target high-frame data are replaced with the pixel points of the target low-frame data, thus the quality of a picture is improved.
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公开(公告)号：US20230049704A1
公开(公告)日：2023-02-16
申请号：US17570563
申请日：2022-01-07
IPC分类号： H01L21/768 , H01L23/528
摘要： The present invention provides a metal interconnection structure and a manufacturing method thereof, the metal interconnection structure includes: metal interconnection lines disposed at intervals, first metal layers respectively disposed on the metal interconnection lines; second metal layers respectively disposed on the first metal layers; dielectric layers disposed on both sides of the first metal layer and the second metal layer and having a gap with both the first metal layer and the second metal layer; and a metal diffusion covering layer covering the dielectric layer and the second metal layer. In the present invention, by disposing the dielectric layer on both sides of the first metal layer and the second metal layer, and the dielectric layer has a gap with both the first metal layer and the second metal layer, and the formed metal interconnection structure reduces parasitic capacitance due to the gap, and the gaps existing between the first metal layer and the dielectric layer and between the second metal layer and the dielectric layer can further reduce the diffusion of metal ions to the dielectric layer.
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公开(公告)号：US20230021106A1
公开(公告)日：2023-01-19
申请号：US17564762
申请日：2021-12-29
摘要： The present invention provides an on-chip all-solid-state supercapacitor, which includes a first electrode and a second electrode, and both the first electrode and the second electrode include a substrate, a laminated structure, a conductive thin film layer and a solid electrolyte. The laminated structure is disposed on a surface of the substrate and is provided with at least one deep trench structure; an inner surface of the deep trench structure is provided with a sacrificial layer trench, which increases the electrode area of the on-chip all-solid-state supercapacitor, and further increases the capacitance density and energy density; the conductive thin film layer covers the inner surface of the deep trench structure, an inner surface of the sacrificial layer trench, the surface of the substrate exposed in the deep trench structure and a surface of the laminated structure facing away from the substrate; the solid electrolyte is filled inside the sacrificial layer trench and the deep trench structure covered by the conductive thin film layer; the solid electrolyte also covers a surface of the conductive thin film layer facing away from the substrate, and the solid electrolyte of the first electrode and the solid electrolyte of the second electrode are bonded together. The present invention also provides a preparation method of an on-chip all-solid-state supercapacitor.
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