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    IMAGE SENSORS WITH IMPROVED SURFACE PLANARITY
    1.
    发明申请
    IMAGE SENSORS WITH IMPROVED SURFACE PLANARITY 有权

    公开(公告)号：US20170141146A1

    公开(公告)日：2017-05-18

    申请号：US15139505

    申请日：2016-04-27

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Aaron BELSHER ,  Richard MAURITZSON ,  Swarnal BORTHAKUR ,  Ulrich BOETTIGER

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.

    SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND ISOLATION STRUCTURES
    2.
    发明申请
    SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND ISOLATION STRUCTURES 有权

    公开(公告)号：US20220367534A1

    公开(公告)日：2022-11-17

    申请号：US17302836

    申请日：2021-05-13

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jeffrey Peter GAMBINO ,  David T. PRICE ,  Marc Allen SULFRIDGE ,  Richard MAURITZSON ,  Michael Gerard KEYES ,  Ryan RETTMANN ,  Kevin MCSTAY

    IPC: H01L27/146

    Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.

    IMAGE SENSORS HAVING HIGH DYNAMIC RANGE PIXELS
    5.
    发明公开
    IMAGE SENSORS HAVING HIGH DYNAMIC RANGE PIXELS 审中-公开

    公开(公告)号：US20240205562A1

    公开(公告)日：2024-06-20

    申请号：US18067493

    申请日：2022-12-16

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Sergey VELICHKO ,  Manuel H. INNOCENT ,  Richard MAURITZSON

    IPC: H04N25/77 ,  H04N25/78

    CPC classification number: H04N25/77 ,  H04N25/78 ,  H04N25/79

    Abstract: An image sensor may include an array of imaging pixels arranged in rows and columns. Each imaging pixel may include a photodiode, an overflow capacitor, an overflow transistor that is interposed between the photodiode and the overflow capacitor, a floating diffusion region, a transfer transistor that is interposed between the photodiode and the floating diffusion region, a voltage supply, and a reset transistor that is interposed between the floating diffusion region and the voltage supply. The voltage supply may provide a voltage at a first magnitude that is less than the pinning voltage for a first portion of a reset period and may provide the voltage at a second magnitude that is greater than the pinning voltage for a second portion of the reset period.

    HIGH DYNAMIC RANGE PIXEL USING LIGHT SEPARATION
    6.
    发明申请
    HIGH DYNAMIC RANGE PIXEL USING LIGHT SEPARATION 审中-公开

    公开(公告)号：US20180269245A1

    公开(公告)日：2018-09-20

    申请号：US15758387

    申请日：2016-12-08

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Marko MLINAR ,  Ulrich BOETTIGER ,  Richard MAURITZSON

    IPC: H01L27/146 ,  H04N5/369 ,  H04N9/04

    CPC classification number: H01L27/14621 ,  H01L27/14607 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H04N5/3696 ,  H04N9/04

    Abstract: An image sensor may include pixels having nested sub-pixels. A pixel with nested sub-pixels may include an inner sub-pixel that has either an elliptical or a rectangular light collecting area. The inner sub-pixel may be formed in a substrate and may be immediately surrounded by a sub-pixel group that includes one or more sub-pixels. The inner sub-pixel may have a light collecting area at a surface that is less sensitive than the light collecting area of the one or more outer sub-pixel groups. Microlenses may be formed over the nested sub-pixels, to direct light away from the inner sub-pixel group to the outer sub-pixel groups in nested sub-pixels. A color filter of a single color may be formed over the nested sub-pixels. Hybrid color filters having a single color filter region over the inner sub-pixel and a portion of the one or more outer sub-pixel groups may also be used.

    STACKED-DIE IMAGE SENSORS WITH SHIELDING
    8.
    发明申请
    STACKED-DIE IMAGE SENSORS WITH SHIELDING 审中-公开

    公开(公告)号：US20170221954A1

    公开(公告)日：2017-08-03

    申请号：US15155245

    申请日：2016-05-16

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Raminda MADURAWE ,  Richard MAURITZSON

    IPC: H01L27/146 ,  H01L25/04

    Abstract: A stacked-die image sensor may be provided with an array of image pixels. The stacked-die image sensor may include at least first and second integrated circuit dies stacked on top of one another. Some of the pixel circuitry in each pixel may be formed in the first integrated circuit die and some of the pixel circuitry in each pixel may be formed in the second integrated circuit die. Coupling structures such as conductive pads may electrically couple the pixel circuitry in the first integrated circuit die to the pixel circuitry in the second integrated circuit die. A shielding structure may partially or completely surround each conductive pad to reduce parasitic capacitive coupling between adjacent conductive pads. The shielding structure may be a metal wire coupled to a ground voltage. The shielding structure may extend between columns of image pixels and/or between rows of image pixels.

    HIGH DYNAMIC RANGE PIXEL USING LIGHT SEPARATION
    10.
    发明申请
    HIGH DYNAMIC RANGE PIXEL USING LIGHT SEPARATION 审中-公开

    公开(公告)号：US20200020730A1

    公开(公告)日：2020-01-16

    申请号：US16583743

    申请日：2019-09-26

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Marko MLINAR ,  Ulrich BOETTIGER ,  Richard MAURITZSON

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/369

    Abstract: An image sensor may include pixels having nested sub-pixels. A pixel with nested sub-pixels may include an inner sub-pixel that has either an elliptical or a rectangular light collecting area. The inner sub-pixel may be formed in a substrate and may be immediately surrounded by a sub-pixel group that includes one or more sub-pixels. The inner sub-pixel may have a light collecting area at a surface that is less sensitive than the light collecting area of the one or more outer sub-pixel groups. Microlenses may be formed over the nested sub-pixels, to direct light away from the inner sub-pixel group to the outer sub-pixel groups in nested sub-pixels. A color filter of a single color may be formed over the nested sub-pixels. Hybrid color filters having a single color filter region over the inner sub-pixel and a portion of the one or more outer sub-pixel groups may also be used.

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