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    IMAGING SYSTEMS HAVING IMAGE SENSOR PIXEL ARRAYS WITH SUB-PIXEL RESOLUTION CAPABILITIES
    3.
    发明申请
    IMAGING SYSTEMS HAVING IMAGE SENSOR PIXEL ARRAYS WITH SUB-PIXEL RESOLUTION CAPABILITIES 有权
    具有子像素分辨率能力的图像传感器像素阵列的成像系统

    公开(公告)号：US20150350583A1

    公开(公告)日：2015-12-03

    申请号：US14295203

    申请日：2014-06-03

    申请人： Semiconductor Components Industries, LLC

    发明人： Richard A. Mauritzson ,  Dennis Robert Engelbrecht ,  Robert A. Black

    IPC分类号： H04N5/378 ,  H01L27/146

    CPC分类号： H04N5/378 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/37457 ,  H04N9/045

    摘要： An image sensor may include an array of photodiodes and readout circuitry. A group of adjacent photodiodes in the array may be covered with a first color filter element that transmits a first color light and an additional group of adjacent photodiodes may be covered with a second color filter element that transmits a second color light. The group of photodiodes may share a floating diffusion node. The array may be operable in a low resolution mode in which the readout circuitry reads out image signals corresponding to a sum of charges generated by the group of photodiodes and in a high resolution mode in which the readout circuitry reads out image signals corresponding to charges generated by each of the photodiodes from the shared floating diffusion node. The photodiodes in the group may capture charge using different integration times for generating high-dynamic-range images.

    摘要翻译： 图像传感器可以包括光电二极管阵列和读出电路。 阵列中的一组相邻的光电二极管可以被透射第一颜色光的第一滤色器元件覆盖，并且附加的一组相邻光电二极管可以被透射第二颜色光的第二滤色器元件覆盖。 光电二极管组可以共享浮动扩散节点。 阵列可以以低分辨率模式工作，其中读出电路读出对应于由该组光电二极管产生的电荷之和的图像信号，并且其中读出电路读出对应于产生的电荷的图像信号 通过来自共享浮动扩散节点的每个光电二极管。 组中的光电二极管可以使用不同的积分时间捕获电荷，以产生高动态范围的图像。

    Image sensors having photodiode regions implanted from multiple sides of a substrate
    4.
    发明授权
    Image sensors having photodiode regions implanted from multiple sides of a substrate 有权

    公开(公告)号：US09930281B2

    公开(公告)日：2018-03-27

    申请号：US15155742

    申请日：2016-05-16

    申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    发明人： Swarnal Borthakur ,  Ulrich Boettiger ,  Richard A. Mauritzson

    IPC分类号： H04N5/378 ,  H01L27/146

    CPC分类号： H04N5/378 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14698

    摘要： An image sensor with an array of pixels is provided. The array may include a semiconductor substrate having opposing first and second sides. A first photodiode region may be implanted in the semiconductor substrate through the first side. A second photodiode region may be implanted in the semiconductor substrate through the second side. The second photodiode region may be implanted to overlap with the first photodiode region in the semiconductor substrate to form a continuous photodiode region that extends from the first side to the second side of the substrate. The continuous region may generate charge in response to image light. The continuous region may belong to a single pixel that generates an image signal from the charge. The image signal may be conveyed to readout circuitry via metallization layers formed over the substrate. The first and second photodiode regions may be thermally activated prior to forming the metallization layers.