公开(公告)号：US20190189688A1

公开(公告)日：2019-06-20

申请号：US15844005

申请日：2017-12-15

申请人： SANDISK TECHNOLOGIES LLC

发明人： Jeffrey S. LILLE

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/249 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1608

摘要： A memory cell includes a first electrode which extends horizontally over a substrate, a layer stack containing a phase change memory material layer and a threshold switch material layer which wrap around the first electrode, and a second electrode which contains a first vertical portion and a second vertical portion which extend vertically over the substrate and are located on first and second lateral sides of the layer stack.