公开(公告)号：US20240282576A1

公开(公告)日：2024-08-22

申请号：US18535594

申请日：2023-12-11

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Hyungju RYU ,  Sangjin KIM ,  Yigwon KIM ,  Jongsu KIM

IPC: H01L21/027 ,  G03F7/00 ,  H01L21/304

CPC classification number: H01L21/0274 ,  G03F7/70625 ,  G03F7/70633 ,  H01L21/3043

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor substrate on a second semiconductor substrate; performing a first physical parameter measurement on a first surface of the first semiconductor substrate to obtain first displacement data; polishing the first surface of the first semiconductor substrate after the first displacement data is obtained; performing a second physical parameter measurement on the polished first surface of the first semiconductor substrate to obtain second displacement data; and forming circuit patterns on the polished first surface of the first semiconductor substrate based on the second displacement data.

公开(公告)号：US20240055425A1

公开(公告)日：2024-02-15

申请号：US18365452

申请日：2023-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungju RYU ,  Sangjin KIM ,  Yigwon KIM ,  Changmin PARK

IPC: H01L27/088 ,  H01L29/775 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/088 ,  H01L29/775 ,  H01L29/42392 ,  H01L29/0673

Abstract: A semiconductor device is provided, the semiconductor device including; a substrate; a first fin structure extending on the substrate in a first direction, and having a first fin portion having a first width and a second fin portion having a second width; a second fin structure extending on the substrate in the first direction, and having the second width; first gate lines disposed on the first fin portion and the second fin structure, and extending in a second direction; second gate lines disposed on the second fin portion and the second fin structure, and extending in the second direction; a third gate line disposed on the second fin structure, and extending in the second direction between the first and second gate lines; and a device isolation pattern connected to an end portion of the third gate, and extending between the first and second fin portions.

公开(公告)号：US20230375936A1

公开(公告)日：2023-11-23

申请号：US18153568

申请日：2023-01-12

Applicant: Samsung Electronics Co, Ltd.

Inventor： Sangjin KIM ,  Chansik KIM ,  Geun Su LEE ,  Sungjae JUNG ,  Dokyeong KWON ,  Yigwon KIM ,  Hyunju SONG ,  Hyungju RYU ,  Tae Min CHOI ,  Keon HUH

IPC: G03F7/32 ,  C08F297/02

CPC classification number: G03F7/322 ,  C08F297/02

Abstract: A developing composition and a method of forming a pattern using the same are provided. According to embodiments of inventive concepts, the developing composition may include at least one repeating unit selected from a first repeating unit represented by Chemical Formula A1 a second repeating unit represented by Chemical Formula A2, or both the first repeating unit represented by Chemical Formula A1 and second repeating unit represented by Chemical Formula A2. The developing composition may further include a copolymer including a third repeating unit represented by Chemical Formula A3.