公开(公告)号：US11215927B2

公开(公告)日：2022-01-04

申请号：US16243548

申请日：2019-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NISSAN CHEMICAL CORPORATION

Inventor： Ju-Young Kim ,  Hyunwoo Kim ,  Makoto Nakajima ,  Satoshi Takeda ,  Shuhei Shigaki ,  Wataru Shibayama

IPC: G03F7/11 ,  C09D183/08 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/20 ,  G03F7/16

Abstract: Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol. X—Si(R1)2(R2)  [Formula 1] Y—Si(R3)3  [Formula 7]

公开(公告)号：US20250044697A1

公开(公告)日：2025-02-06

申请号：US18910475

申请日：2024-10-09

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru Shibayama ,  Satoshi Takeda ,  Makoto Nakajima

IPC: G03F7/11 ,  C08G77/00 ,  C08G77/14 ,  C09D183/06 ,  H01L21/02 ,  H01L21/027 ,  H01L21/266 ,  H01L21/308

Abstract: A method for producing a semiconductor device includes applying a composition for forming a silicon-containing resist underlayer film, wherein the composition comprises a polysiloxane having a unit structure including a carbonyl group-containing functional group, wherein the silicon-containing resist underlayer film is used as a mask layer in a step of removing the mask layer with hydrogen peroxide-containing chemical after transfer of a pattern to an underlayer by lithography process onto a semiconductor substrate, followed by baking the composition, to thereby form a resist underlayer film, applying a resist composition onto resist underlayer film to thereby form a resist film, exposing the resist film to light, developing the resist after the light exposure to thereby form a resist pattern, etching the resist underlayer film with the resist pattern, processing the semiconductor substrate with the patterned resist and resist underlayer film, and removing the mask layer with a hydrogen peroxide-containing chemical.

公开(公告)号：US12227621B2

公开(公告)日：2025-02-18

申请号：US17288665

申请日：2019-10-25

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Wataru Shibayama ,  Yuichi Goto ,  Shun Kubodera ,  Satoshi Takeda ,  Ken Ishibashi ,  Makoto Nakajima

IPC: H01L21/027 ,  C08G77/26 ,  H01L21/308

Abstract: A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate.
For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.

公开(公告)号：US11531269B2

公开(公告)日：2022-12-20

申请号：US16339555

申请日：2017-10-02

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Shuhei Shigaki ,  Satoshi Takeda ,  Wataru Shibayama ,  Makoto Nakajima ,  Rikimaru Sakamoto

IPC: H01L21/027 ,  G03F7/11 ,  G03F7/40 ,  G03F7/20 ,  H01L21/033 ,  H01L21/02 ,  C09D183/04 ,  C08G77/18 ,  C08G77/24 ,  C08G77/20 ,  G03F7/075 ,  H01L21/311

Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.