公开(公告)号：US09887375B2

公开(公告)日：2018-02-06

申请号：US15356566

申请日：2016-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Zhaoqun Zhou ,  Peter T. Kazlas ,  Benjamin S. Mashford

IPC: H01L51/50 ,  C09K11/88 ,  B82Y40/00 ,  B82Y20/00 ,  H01L51/00

CPC classification number: H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/06 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/4233 ,  H01L51/5056 ,  H01L51/5088 ,  H01L2251/5369 ,  H05B33/14 ,  Y02E10/549 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: One embodiment relates to a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes, wherein at least a portion of the quantum dots comprise a core comprising a first semiconductor material and an outer shell surrounding the core, the shell comprising a second semiconductor material, wherein the first semiconductor material confines holes better than electrons in the core and the second semiconductor material is permeable to electrons; and a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of a first inorganic semiconductor material, the first layer being disposed between the layer comprising quantum dots and the cathode, wherein the first layer and the cathode form an ohmic contact during operation of the device. In a second embodiments, a device comprises a pair of electrodes comprising an anode and a cathode; a layer comprising quantum dots disposed between the electrodes; a first layer comprising a material capable of transporting and injecting electrons, the material comprising nanoparticles of an n-doped inorganic semiconductor material, the first layer being in contact with the cathode and positioned between the emissive layer and the cathode, and a second layer comprising a material capable of transporting electrons comprising an inorganic semiconductor material, the second layer being disposed between the emissive layer and the first layer, wherein the second layer has a lower electron conductivity than the first layer. In a third embodiment, a device comprises a pair of electrodes comprising an anode and a cathode; an layer comprising quantum dots disposed between the electrodes; and a UV treated first layer comprising a material capable of transporting and injecting electrons in contact with the cathode and positioned between the emissive layer and the cathode, the material capable of transporting and injecting electrons comprising an inorganic semiconductor material. A method and other embodiments are also disclosed.

公开(公告)号：US10403690B2

公开(公告)日：2019-09-03

申请号：US15862157

申请日：2018-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Zhaoqun Zhou ,  Peter T. Kazlas

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L33/06

Abstract: A light emitting device comprising: a pair of electrodes; two or more light emitting elements disposed between the electrodes in a stacked arrangement, wherein a light emitting element comprises a layer comprising an emissive material, and a charge generation element disposed between adjacent light emitting elements in the stacked arrangement, the charge generation element comprising a first layer comprising an inorganic n-type semiconductor material, and a second layer comprising a hole injection material. A charge generation is also disclosed.

公开(公告)号：US09865659B2

公开(公告)日：2018-01-09

申请号：US14644668

申请日：2015-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Zhaoqun Zhou ,  Peter T. Kazlas

IPC: H01L27/32 ,  H01L51/52 ,  H01L33/06 ,  H01L51/50

CPC classification number: H01L27/3225 ,  H01L33/06 ,  H01L51/502 ,  H01L51/5044 ,  H01L51/5056 ,  H01L51/5088 ,  H01L51/5278 ,  H01L2251/5369

Abstract: A light emitting device comprising: a pair of electrodes; two or more light emitting elements disposed between the electrodes in a stacked arrangement, wherein a light emitting element comprises a layer comprising an emissive material; and a charge generation element disposed between adjacent light emitting elements in the stacked arrangement, the charge generation element comprising a first layer comprising an inorganic n-type semiconductor material, and a second layer comprising a hole injection material. A charge generation element is also disclosed.