公开(公告)号：US20190385695A1

公开(公告)日：2019-12-19

申请号：US16249543

申请日：2019-01-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changwook JEONG ,  Sanghoon MYUNG ,  Min-Chul PARK ,  Jeonghoon KO ,  Jisu RYU ,  Hyunjae JANG ,  Hyungtae KIM ,  Yunrong LI ,  Min Chul JEON

IPC: G11C29/50 ,  G11C29/48 ,  G11C29/56 ,  G01R31/27 ,  G01R31/26 ,  G01R31/3185 ,  G01R31/30

Abstract: A fault analysis method of a semiconductor fault analysis device is provided. The fault analysis method includes: receiving measurement data measured corresponding to a semiconductor device; generating double sampling data based on the measurement data and reference data; performing a fault analysis operation with respect to the double sampling data; classifying a fault type of the semiconductor device based on a result of the fault analysis operation; and outputting information about the fault type.