SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
    半导体器件及其制造方法以及包括其的电子器件

    公开(公告)号:US20150364472A1

    公开(公告)日:2015-12-17

    申请号:US14712041

    申请日:2015-05-14

    Abstract: A semiconductor device, a method for manufacturing the same, and an electronic device including the same are provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first channel layer and a first ion gel. The second transistor includes a second channel layer and a second ion gel. The first channel layer and the second channel layer may include, for example, graphene. The first ion gel and the second ion gel include different ionic liquids. The first ion gel and the second ion gel include different cations and/or different anions. One of the first transistor and the second transistor is a p-type transistor, and the other one is an n-type transistor. The combination of the first transistor and the second transistor constitutes an inverter.

    Abstract translation: 提供半导体器件,其制造方法和包括该半导体器件的电子器件。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管包括第一沟道层和第一离子凝胶。 第二晶体管包括第二沟道层和第二离子凝胶。 第一沟道层和第二沟道层可以包括例如石墨烯。 第一离子凝胶和第二离子凝胶包括不同的离子液体。 第一离子凝胶和第二离子凝胶包括不同的阳离子和/或不同的阴离子。 第一晶体管和第二晶体管中的一个是p型晶体管,另一个是n型晶体管。 第一晶体管和第二晶体管的组合构成逆变器。

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