-
公开(公告)号:US11507312B2
公开(公告)日:2022-11-22
申请号:US16896839
申请日:2020-06-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeong-Woo Park , Dong-Min Kim , Youngmoon Kim , Kyoung Back Lee
IPC: G06F3/06
Abstract: A storage device that includes a nonvolatile memory device is described. The storage device includes areas and a controller. The controller receives a write command and data from an external host device. The controller then preferentially writes the data in an area associated with a turbo write based on a turbo write policy, or in an area not associated with a turbo write based on a normal write policy. The controller also receives a move command from the external host device and moves data stored in the area to a different area based on the move command.
-
公开(公告)号:US10176029B2
公开(公告)日:2019-01-08
申请号:US15081128
申请日:2016-03-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinhwan Choi , Younwon Park , Jeong-Woo Park , Youngmoon Kim
Abstract: An operation method is for a storage device that includes a storing unit storing a plurality of error logs and a physical layer and exchanges an electrical signal with a host via the physical layer. The operation method includes receiving a debugging command from the host, setting a first value at a first attribute included in the physical layer in response to the debugging command, setting a second value different from the first value at the first attribute in response to a control of the host, setting one among the plurality of error logs at a second attribute based on the first attribute at which the second value is set, and transmitting the error log set at the second attribute to the host in response to a control of the host.
-
公开(公告)号:US12067296B2
公开(公告)日:2024-08-20
申请号:US18055133
申请日:2022-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeong-Woo Park , Dong-Min Kim , Youngmoon Kim , Kyoung Back Lee
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0679
Abstract: A storage device that includes a nonvolatile memory device is described. The storage device includes areas and a controller. The controller receives a write command and data from an external host device. The controller then preferentially writes the data in an area associated with a turbo write based on a turbo write policy, or in an area not associated with a turbo write based on a normal write policy. The controller also receives a move command from the external host device and moves data stored in the area to a different area based on the move command.
-
公开(公告)号:US11645007B2
公开(公告)日:2023-05-09
申请号:US16903700
申请日:2020-06-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Songho Yoon , Dong-Min Kim , Youngmoon Kim , Jeong-Woo Park , Kyoung Back Lee
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0611 , G06F3/0656 , G06F3/0679 , G06F2212/7203
Abstract: A storage device includes a nonvolatile memory device that includes a first region including memory cells configured to store n-bit data and a second region including memory cells configured to store m-bit data and a memory controller, where n and m are natural numbers and n is less than m. The first region includes a first area and a second area, and the second region includes a third area. The memory controller is configured to perform one of a turbo write operation on the first area or the second area and a normal write operation on the third area, and configured to perform one of a turbo read operation on the first area or the second area and a normal read operation on the third area.
-
公开(公告)号:US20210034513A1
公开(公告)日:2021-02-04
申请号:US16896638
申请日:2020-06-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngmoon Kim , Dong-Min Kim , Jeong-Woo Park
IPC: G06F12/02 , G06F12/0873 , G06F9/30 , G06F9/48 , G06F9/54
Abstract: A storage device includes a nonvolatile memory device that includes a first area, a second area, and a third area, and a controller that receives a write command and first data from a host device, preferentially writes the first data in the first area or the second area rather than the third area when the first data is associated with a turbo write, and writes the first data in the first area, the second area, or the third area when the first data is associated with a normal write. The controller moves second data between the first area, the second area, and the third area based on the policy received from the host device.
-
公开(公告)号:US11556464B2
公开(公告)日:2023-01-17
申请号:US16896638
申请日:2020-06-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngmoon Kim , Dong-Min Kim , Jeong-Woo Park
IPC: G06F12/02 , G06F12/0873 , G06F9/30 , G06F9/54 , G06F9/48
Abstract: A storage device includes a nonvolatile memory device that includes a first area, a second area, and a third area, and a controller that receives a write command and first data from a host device, preferentially writes the first data in the first area or the second area rather than the third area when the first data is associated with a turbo write, and writes the first data in the first area, the second area, or the third area when the first data is associated with a normal write. The controller moves second data between the first area, the second area, and the third area based on the policy received from the host device.
-
公开(公告)号:US20210034297A1
公开(公告)日:2021-02-04
申请号:US16896839
申请日:2020-06-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jeong-Woo Park , Dong-Min Kim , Youngmoon Kim , Kyoung Back Lee
IPC: G06F3/06
Abstract: A storage device that includes a nonvolatile memory device is described. The storage device includes areas and a controller. The controller receives a write command and data from an external host device. The controller then preferentially writes the data in an area associated with a turbo write based on a turbo write policy, or in an area not associated with a turbo write based on a normal write policy. The controller also receives a move command from the external host device and moves data stored in the area to a different area based on the move command.
-
-
-
-
-
-