公开(公告)号：US10199551B2

公开(公告)日：2019-02-05

申请号：US15636084

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun Kim ,  Jae-Yoon Kim ,  Youngkyu Sung ,  Gamham Yong ,  Dongyeoul Lee ,  Suyeol Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/46 ,  H01L23/00

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked. A connection electrode is positioned above the light-emitting structure. The connection electrode includes a connection metal layer electrically connected to at least one of the first and second semiconductor layers. A UBM pattern is on the connection electrode. A connection terminal is on the UBM pattern. The connection metal layer includes a first metal element. A heat conductivity of the first metal element is higher than that of gold (Au). The connection terminal includes a second metal element. A first reactivity of the first metal element with the second metal element is lower than a second reactivity of gold (Au) with the second metal element.

公开(公告)号：US12284843B2

公开(公告)日：2025-04-22

申请号：US17569028

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngkyu Sung ,  Dooho Jeong ,  Myunggoo Cheong ,  Seungwan Chae

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/60 ,  H01L33/62 ,  H10H20/82 ,  H10H20/821 ,  H10H20/856 ,  H10H20/857 ,  H10H29/10 ,  H10H20/01 ,  H10H20/825 ,  H10H20/833

Abstract: A semiconductor light emitting device package includes: a substrate; a first semiconductor layer including first regions including a first-type semiconductor material and having a first height, and a second region disposed between the first regions and having a second height lower than the first height; an active layer including disposed in the first regions, and emitting light of a predetermined wavelength band; a second semiconductor layer disposed on the active layer and formed of a second-type semiconductor material; a third semiconductor layer disposed on the second semiconductor layer, and formed of a second-type semiconductor material different from the second-type semiconductor material of the second semiconductor layer; a transparent electrode layer including disposed on the third semiconductor layer; and a reflective electrode layer electrically connected to the transparent electrode layer, respectively, and including portions overlapping the active layer in a vertical direction and a horizontal direction, respectively.

公开(公告)号：US20180166618A1

公开(公告)日：2018-06-14

申请号：US15636084

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： TAEHUN KIM ,  Jae-Yoon Kim ,  Youngkyu Sung ,  Gamham Yong ,  Dongyeoul Lee ,  Suyeol Lee

IPC: H01L33/62 ,  H01L33/46 ,  H01L23/00

CPC classification number: H01L33/62 ,  H01L24/02 ,  H01L24/04 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L33/46 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03472 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05016 ,  H01L2224/05017 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05569 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/06051 ,  H01L2224/10126 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/054 ,  H01L2924/01028 ,  H01L2924/0536 ,  H01L2924/01024 ,  H01L2924/05341 ,  H01L2924/0544 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01083 ,  H01L2924/01058 ,  H01L2924/01022 ,  H01L2924/01078 ,  H01L2924/01013

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked. A connection electrode is positioned above the light-emitting structure. The connection electrode includes a connection metal layer electrically connected to at least one of the first and second semiconductor layers. A UBM pattern is on the connection electrode. A connection terminal is on the UBM pattern. The connection metal layer includes a first metal element. A heat conductivity of the first metal element is higher than that of gold (Au). The connection terminal includes a second metal element. A first reactivity of the first metal element with the second metal element is lower than a second reactivity of gold (Au) with the second metal element.