公开(公告)号：US12245440B2

公开(公告)日：2025-03-04

申请号：US17692369

申请日：2022-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Hwan Kim ,  Jeong Ho Yoo ,  Cho Eun Lee ,  Yong Uk Jeon ,  Young Dae Cho

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H10D30/67 ,  H10D64/01

Abstract: A semiconductor includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern, the source/drain pattern being in contact with the sheet patterns, and gate structures on opposite sides of the source/drain pattern, the gate structures being spaced apart from each other along a second direction and including gate electrodes that surround the sheet patterns, wherein the source/drain pattern includes a first epitaxial region having at least one of antimony and bismuth, the first epitaxial region having a bottom part in contact with the lower pattern, but not with the sheet patterns, and a thickness of the bottom part increasing and decreasing away from the gate structures in the second direction, and a second epitaxial region on the first epitaxial region, the second epitaxial region including phosphorus.

公开(公告)号：US20240063262A1

公开(公告)日：2024-02-22

申请号：US18127298

申请日：2023-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Uk Jeon ,  Kyung Ho Kim ,  Ki Hwan Kim ,  Kang Hun Moon ,  Cho Eun Lee

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/423 ,  H01L29/786 ,  H01L27/092

CPC classification number: H01L29/0673 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/66553 ,  H01L27/092

Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern extending in on a substrate; nanosheets stacked on the active pattern; a gate electrode on the active pattern and surrounding the nanosheets; a source/drain trench on the active pattern adjacent the gate electrode; and a source/drain region in the source/drain trench, The source/drain region includes: a first layer provided along a sidewall and a bottom surface of the source/drain trench, the first layer having a first n-type impurity doped therein; a second layer on the first layer in the source/drain trench, the second layer having germanium (Ge) doped therein; and a third layer filling a remaining portion of the source/drain trench on the second layer, the third layer having a second n-type impurity doped therein.