公开(公告)号：US10817624B2

公开(公告)日：2020-10-27

申请号：US15975008

申请日：2018-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Hwan Park ,  Kyung Ho Kim ,  Min-Chul Kim ,  Sagar Uttarwar ,  Yong Gil Song ,  Min Gon Shin ,  Sun-Mi Yoo ,  Hyun Su Jang ,  Seung Yeun Jeong ,  Ki Hyun Choi

IPC: G06F21/79 ,  G06F3/06 ,  G06F12/02 ,  G06F21/85 ,  G06F12/14

Abstract: A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.