公开(公告)号：US20230195344A1

公开(公告)日：2023-06-22

申请号：US17937068

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Mi Yoo ,  Young-Sik Lee ,  Jeong-Eun Kim ,  Hye Ju Kim ,  So Dam Hwang

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/064 ,  G06F3/0607 ,  G06F3/0658 ,  G06F3/0679 ,  G06F12/0253

Abstract: A memory storage device includes a non-volatile memory including a plurality of memory blocks and a memory controller configured to control the non-volatile memory, wherein the memory controller is configured to provide host data including write data to the non-volatile memory, wherein the memory controller is configured to perform a garbage collection operation on the memory blocks to provide garbage collection data to the non-volatile memory when a free block count of the memory blocks is smaller than a first threshold value, and wherein the memory controller is configured to increase a capacity for providing the host data when the free block count of the memory blocks is greater than a second threshold value less than the first threshold value and a valid page count of the first memory block among the memory blocks is less than a third threshold value.

公开(公告)号：US10817624B2

公开(公告)日：2020-10-27

申请号：US15975008

申请日：2018-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Hwan Park ,  Kyung Ho Kim ,  Min-Chul Kim ,  Sagar Uttarwar ,  Yong Gil Song ,  Min Gon Shin ,  Sun-Mi Yoo ,  Hyun Su Jang ,  Seung Yeun Jeong ,  Ki Hyun Choi

IPC: G06F21/79 ,  G06F3/06 ,  G06F12/02 ,  G06F21/85 ,  G06F12/14

Abstract: A storage device includes a non-volatile memory including a first block, a second block and a block management area that stores an initial data write time and a final data write time for each of the first block and the second block. The storage device also includes a memory controller that determines a creation time and a modification time for first data in response to a permanently delete command identifying the first data, selects at least one of the first block and the second block to be permanently deleted by comparing the initial data write time and the final data write time for each of the first block and the second block with the creation time and the modification time, and permanently deletes the selected at least one of the first block and the second block.

公开(公告)号：US12056377B2

公开(公告)日：2024-08-06

申请号：US17937068

申请日：2022-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Mi Yoo ,  Young-Sik Lee ,  Jeong-Eun Kim ,  Hye Ju Kim ,  So Dam Hwang

IPC: G06F3/06 ,  G06F12/02

CPC classification number: G06F3/064 ,  G06F3/0607 ,  G06F3/0658 ,  G06F3/0679 ,  G06F12/0253

Abstract: A memory storage device includes a non-volatile memory including a plurality of memory blocks and a memory controller configured to control the non-volatile memory, wherein the memory controller is configured to provide host data including write data to the non-volatile memory, wherein the memory controller is configured to perform a garbage collection operation on the memory blocks to provide garbage collection data to the non-volatile memory when a free block count of the memory blocks is smaller than a first threshold value, and wherein the memory controller is configured to increase a capacity for providing the host data when the free block count of the memory blocks is greater than a second threshold value less than the first threshold value and a valid page count of the first memory block among the memory blocks is less than a third threshold value.