公开(公告)号：US11211497B2

公开(公告)日：2021-12-28

申请号：US16848145

申请日：2020-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Gun You ,  Dong Hyun Kim ,  Byoung-Gi Kim ,  Yun Suk Nam ,  Yeong Min Jeon ,  Sung Chui Park ,  Dae Won Ha

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L23/532 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165

Abstract: A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.