公开(公告)号：US20210202012A1

公开(公告)日：2021-07-01

申请号：US16990262

申请日：2020-08-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： HYUNSEUNG HAN ,  SEONGHYEOG CHOI ,  YOUNGSUK RA ,  HONG RAK SON ,  TAEHYUN SONG ,  BOHWAN JUN

IPC分类号： G11C16/26 ,  G06F11/10 ,  H03M13/11 ,  G06F3/06 ,  G11C16/10

摘要： A storage device includes a nonvolatile memory device and a memory controller. The memory controller receives first data from the nonvolatile memory device based on a first read command, and performs error correction on the first data. When the error correction fails, the memory controller transmits a second read command and second read voltage information to the nonvolatile memory device, receives second data from the nonvolatile memory device, transmits a third read command and third read voltage information to the nonvolatile memory device, and receives third data from the nonvolatile memory device. The memory controller adjusts an offset based on the second data and the third data, transmits a fourth read command, fourth read voltage information, and the offset to the nonvolatile memory device, receives fourth data from the nonvolatile memory device, and performs a soft decision process based on the fourth data.