公开(公告)号：US20160380082A1

公开(公告)日：2016-12-29

申请号：US15138234

申请日：2016-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN-KWAN YU ,  DONG-SUK SHIN ,  WOON-KI SHIN ,  CHEOL-WOO PARK ,  RYONG HA ,  HAN-JIN LIM

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L21/3213

CPC classification number: H01L29/66795 ,  H01L21/02068 ,  H01L21/32134 ,  H01L29/66545 ,  H01L29/7848

Abstract: A method of manufacturing a semiconductor device includes forming an active fin extending longitudinally in a first direction along a surface of a substrate, forming a field insulating layer on the substrate, the field insulating layer covering a part of the active fin, forming a dummy gate electrode on the field insulating layer and the active fin, the dummy gate electrode extending in a second direction different from the first direction, forming a spacer on the sides of the dummy gate electrode, and removing the dummy gate electrode by a wet etching process that includes rinsing the dummy gate electrode intermittently during an etching away of the dummy gate electrode.

Abstract translation: 一种制造半导体器件的方法包括：形成沿衬底表面沿第一方向纵向延伸的有效鳍，在衬底上形成场绝缘层，所述场绝缘层覆盖有源散热片的一部分，形成虚拟栅极 所述虚拟栅极电极沿与第一方向不同的第二方向延伸，在所述虚拟栅电极的侧面形成间隔物，并通过湿式蚀刻工艺除去所述伪栅电极， 包括在伪栅极电极的蚀刻离开期间间歇地冲洗虚拟栅电极。