公开(公告)号：US20220384340A1

公开(公告)日：2022-12-01

申请号：US17530206

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGHOO SHIN ,  JONGMIN BAEK ,  SANGHOON AHN ,  WOOJIN LEE ,  JUNHYUK LIM

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor integrated circuit device includes a substrate; a transistor on the substrate; an interlayer insulating film on the transistor; an insulating liner on the interlayer insulating film; a first insulating film on the insulating liner; and a first wiring layer on the interlayer insulating film and surrounded by the insulating liner. A height of a top surface of the first insulating film in a vertical direction from a main surface of the interlayer insulating film is different than a height of a top surface of the first wiring layer in the vertical direction. A step exists between the top surfaces of the first wiring layer and the first insulating film. A height of the first insulating film is greater than a height of the first wiring layer. A width of the first wiring layer gradually narrows as the first wiring layer extends upwards along the vertical direction.

公开(公告)号：US20240096797A1

公开(公告)日：2024-03-21

申请号：US18330672

申请日：2023-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINJAE KANG ,  YEONGGIL KIM ,  WOOKYUNG YOU ,  WOOJIN LEE ,  JAYEONG HEO

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53295 ,  H01L27/088

Abstract: Disclosed is a semiconductor device including a substrate, conductive structures on the substrate and extending in parallel to each other in a first direction, and a first interlayer dielectric layer in first and second trenches between the conductive structures. A width in a second direction of the first trench may be less than a width in the second direction of the second trench. The first interlayer dielectric layer may include a lower interlayer dielectric layer and an upper interlayer dielectric layer on the lower interlayer dielectric layer, sequentially stacked. A mechanical strength of the upper interlayer dielectric layer may be greater than a mechanical strength of the lower interlayer dielectric layer.