公开(公告)号：US20210134380A1

公开(公告)日：2021-05-06

申请号：US17001740

申请日：2020-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsun NOH ,  Sungchul LEE ,  Unghwan PI

IPC: G11C19/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

Abstract: A magnetic memory device includes a reading unit on a substrate, a magnetic track layer on the reading unit, the magnetic track layer including a bottom portion between first and second sidewall portions, and a mold structure on the bottom portion of the magnetic track layer, and between the first and second sidewall portions. The mold structure includes first and second mold layers alternately arranged in a first direction perpendicular to a top surface of the substrate, and the magnetic track layer includes magnetic domains and magnetic domain walls between magnetic domains, the first and second sidewall portions of the magnetic track layer including sidewall notches corresponding to the magnetic domain walls, and the bottom portion includes a bottom notch corresponding to one of the magnetic domain walls.

公开(公告)号：US20210359200A1

公开(公告)日：2021-11-18

申请号：US17110524

申请日：2020-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyunghwan LEE ,  Yongseok KIM ,  Kohji KANAMORI ,  Unghwan PI ,  Hyuncheol KIM ,  Sungwon YOO ,  Jaeho HONG

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L23/522

Abstract: A memory device includes a magnetic track layer extending on a substrate, the magnetic track layer having a folded structure that is two-dimensionally villi-shaped, a plurality of reading units including a plurality of fixed layers and a tunnel barrier layer between the magnetic track layer and each of the plurality of fixed layers, and a plurality of bit lines extending on different ones of the plurality of reading units, the plurality of reading units being between the magnetic track layer and corresponding ones of the plurality of bit lines.