公开(公告)号：US09466765B1

公开(公告)日：2016-10-11

申请号：US15056124

申请日：2016-02-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon Yoon ,  Yeon Ji Kim ,  Yong Seok Kim ,  Tae Kang Kim ,  Tae Hun Kim

IPC: H01L33/62 ,  H01L33/36 ,  H01L33/44 ,  H01L21/02 ,  H01L33/22 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L21/02068 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0091

Abstract: A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; forming a first electrode and a second electrode on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; forming an insulating layer covering the first and second electrodes and having first and second openings partially exposing surfaces of the first and second electrodes, respectively; and performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上堆叠包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 在第一导电类型半导体层和第二导电类型半导体层上分别形成第一电极和第二电极; 形成覆盖所述第一和第二电极并且分别具有部分地暴露所述第一和第二电极的表面的第一和第二开口的绝缘层; 以及在所述绝缘层的表面和所述第一和第二电极的部分露出的表面上进行等离子体处理，以在所述绝缘层的表面上形成凹凸部，并在所述第一和第二电极的所述部分露出的表面上形成氧耗尽层 和第二电极。

公开(公告)号：US09548422B2

公开(公告)日：2017-01-17

申请号：US14454612

申请日：2014-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun Kim ,  Ki Seok Kim ,  Chan Mook Lim ,  Tae Kang Kim

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/14

CPC classification number: H01L33/40 ,  H01L33/145 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

Abstract translation: 半导体发光器件包括发光结构和第一和第二电极。 发光结构包括第一和第二导电类型的半导体层和介于它们之间的有源层。 第一和第二电极电连接到第一和第二导电类型半导体层。 第二电极包括电流阻挡层，设置在电流阻挡层上的反射部分，设置在第二导电类型半导体层上的透明电极层，设置在电流阻挡层的区域内的焊盘电极部分，以及至少一个 指状电极部分至少部分地设置在透明电极层上。 透明电极层可以与反射部分间隔开，并且具有围绕反射部分的开口。 在一些示例中，透明电极层可以进一步与电流阻挡层间隔开。