DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250048801A1

    公开(公告)日:2025-02-06

    申请号:US18646162

    申请日:2024-04-25

    Abstract: A display device includes a lower substrate comprising at least one light-emitting diode (LED) light source, an upper substrate comprising at least one quantum dot color filter, and a bonding layer configured to bond the lower substrate and the upper substrate. The upper substrate may include a partition wall structure including least one sub-rod is repeatedly provided in an edge area of a partition wall layer.

    DISPLAY APPARATUS
    2.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240297274A1

    公开(公告)日:2024-09-05

    申请号:US18396249

    申请日:2023-12-26

    CPC classification number: H01L33/50 H01L27/156 H01L33/54 H01L33/58

    Abstract: A display apparatus includes a display module array including a plurality of display modules that are horizontally arranged in a form of a matrix. Each of the plurality of display modules include: a substrate including a mounting surface and a rear surface opposite to the mounting surface; a metal plate bonded to the rear surface and configured to dissipate heat from the substrate; a front cover covering the mounting surface; inorganic light emitting devices mounted on the mounting surface; a color layer between the inorganic light emitting devices and the front cover; and an adhesive layer between the mounting surface and the color layer and configured to bond the mounting surface and the color layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250143036A1

    公开(公告)日:2025-05-01

    申请号:US18891977

    申请日:2024-09-20

    Abstract: A display apparatus includes: an active layer; a first semiconductor layer positioned on a first side of the active layer; a second semiconductor layer positioned on a second side of the active layer. The first semiconductor layer may include: a plurality of semiconductor regions each comprising a plurality of semiconductors; and a plurality of separation regions between the plurality of semiconductor regions. The second semiconductor layer may include: a plurality of first pores disposed as to correspond to the plurality of semiconductor regions; a plurality of second pores disposed as to correspond to the plurality of separation regions; a plurality of color conversion portions positioned in the plurality of first pores and configured to convert light generated from the active layer into lights of different colors; and a plurality of blocking portions positioned in the plurality of second pores and configured to prevent interference between the different colored lights.

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