公开(公告)号：US10901007B2

公开(公告)日：2021-01-26

申请号：US16261175

申请日：2019-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Do Kim ,  Sung Yong Lim ,  Chan Soo Kang ,  Do Hoon Kwon ,  Min Ju Kim ,  Sang Ki Nam ,  Jung Mo Yang ,  Jong Hun Pi ,  Kyu Hee Han

IPC: G01R15/18 ,  H05H1/46 ,  H01F27/28 ,  G01R15/16

Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.