公开(公告)号：US20240112709A1

公开(公告)日：2024-04-04

申请号：US18303937

申请日：2023-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwan Kim ,  Suhee Jeon ,  Seulji Song

IPC: G11C7/10

CPC classification number: G11C7/1096 ,  G11C7/1066 ,  G11C7/1069

Abstract: A method of reading data from a self-selecting memory includes generating a read pulse that has a polarity opposite to that of a write pulse. The write pulse writes data into a target memory cell in the self-selecting memory. The read pulse is applied to the target memory cell. The read pulse has a first edge that is a starting point of the read pulse and a second edge that is an ending point of the read pulse. A slope of the second edge of the read pulse is adjusted such that an undershoot or overshoot on the second edge of the read pulse increases.

公开(公告)号：US12237047B2

公开(公告)日：2025-02-25

申请号：US18303937

申请日：2023-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwan Kim ,  Suhee Jeon ,  Seulji Song

IPC: G11C7/10

Abstract: A method of reading data from a self-selecting memory includes generating a read pulse that has a polarity opposite to that of a write pulse. The write pulse writes data into a target memory cell in the self-selecting memory. The read pulse is applied to the target memory cell. The read pulse has a first edge that is a starting point of the read pulse and a second edge that is an ending point of the read pulse. A slope of the second edge of the read pulse is adjusted such that an undershoot or overshoot on the second edge of the read pulse increases.