公开(公告)号：US20240085282A1

公开(公告)日：2024-03-14

申请号：US18454381

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Chul JO ,  Sang Hyun PARK ,  Su Jin SHIN ,  Gil Ho GU ,  Dae Gon YU ,  So Yeon LEE ,  Yun Bin JEONG

IPC: G01N1/32 ,  B24B7/22

CPC classification number: G01N1/32 ,  B24B7/228

Abstract: There is provide a method for manufacturing analytical semiconductor samples by using an apparatus for manufacturing analytical semiconductor samples, which minimizes a feedback time by manufacturing a viewing surface that is environment-friendly and has a large area. The method comprising mounting the analytical semiconductor samples to a holder; discharging deionized (DI) water to an upper surface of a polishing plate through a DI water nozzle; grinding the analytical semiconductor samples with the upper surface of the polishing plat; determining whether a desired viewing surface of the analytical semiconductor samples has been acquired after the grinding of the analytical semiconductor samples; and transferring the analytical semiconductor samples to analyze the viewing surface of the ground analytical semiconductor samples based on a determination that the desired viewing surface of the analytical semiconductor samples has been acquired.

公开(公告)号：US20180331119A1

公开(公告)日：2018-11-15

申请号：US16027667

申请日：2018-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Ho KIM ,  BiO KIM ,  Hyung Joon KIM ,  Young Seon SON ,  Su Jin SHIN ,  Jae Young AHN ,  Ju Mi YUN ,  HanMei CHOI

IPC: H01L27/11582 ,  H01L29/792 ,  H01L21/28 ,  H01L27/11568 ,  H01L27/11565

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/11568 ,  H01L29/40117 ,  H01L29/7926

Abstract: A semiconductor device includes gate electrodes vertically stacked on a substrate, and channel holes passing through the gate electrodes to extend perpendicularly to the substrate and including a gate dielectric layer and a channel area. The gate dielectric layer may be formed of a plurality of layers, and at least one layer among the plurality of layers may have different thicknesses in different locations.