公开(公告)号：US20240324194A1

公开(公告)日：2024-09-26

申请号：US18602778

申请日：2024-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongjin LEE ,  Junhee LIM ,  Hakseon KIM ,  Kangoh YUN ,  Sohyun LEE

IPC: H10B41/35 ,  G11C16/04 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/41 ,  H10B80/00

CPC classification number: H10B41/35 ,  G11C16/0483 ,  H01L25/0652 ,  H10B41/10 ,  H10B41/27 ,  H10B41/41 ,  H10B80/00 ,  H01L2225/06506

Abstract: An integrated circuit device includes a substrate including an active region including a central active region, base active regions and extended active regions integrated together and defined by a device isolation film. A drain region is located in the central active region, and source regions are respectively located in the base active regions. The base active regions are spaced apart from each other in different diagonal directions with respect to the central active region in a plan view. The extended active regions each have an L-shape, connect the central active region and the base active regions, and are spaced apart from each other. Gate structures that respectively cross the base active regions and are spaced apart from each other on the substrate. The central active region, the extended active regions, the base active regions, and the gate structures configure pass transistors, and the pass transistors share the drain region.