公开(公告)号：US20230045263A1

公开(公告)日：2023-02-09

申请号：US17721450

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YooJin NAM ,  Woongdai KANG ,  Seung-Jun LEE ,  Dongyeong CHOI

IPC: G06F3/06

Abstract: Disclosed is an operation method of a memory device which performs a self-refresh operation. The method includes receiving a deep-sleep mode enter command from a memory controller, changing a magnitude of an internal voltage of the memory device from a first voltage to a second voltage smaller than the first voltage, in response to the deep-sleep mode enter command, and entering a self-refresh mode under control of the memory controller, and the internal voltage is maintained at the second voltage during the self-refresh mode.

公开(公告)号：US20130171809A1

公开(公告)日：2013-07-04

申请号：US13759584

申请日：2013-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Jun LEE ,  Woonkyung LEE

IPC: H01L21/36

CPC classification number: H01L21/36 ,  H01L21/02521 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11578 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

Abstract: A semiconductor device has a substrate that includes a cell array region and a dummy pattern region surrounding the cell array region. The cell array region includes a cell structure having a plurality of cell active pillars extending in a vertical direction from the cell array region of the substrate and includes cell gate patterns and cell gate interlayer insulating patterns alternately stacked on the substrate. The cell gate patterns and cell gate interlayer insulating patterns have sides facing the cell active pillars. The dummy pattern region includes a damp-proof structure.

Abstract translation: 半导体器件具有包括单元阵列区域和围绕单元阵列区域的虚设图案区域的基板。 单元阵列区域包括具有从基板的单元阵列区域沿垂直方向延伸的多个单元有源柱的单元结构，并且包括交替层叠在基板上的单元栅极图案和单元栅极层间绝缘图案。 单元栅极图案和单元栅极层间绝缘图案具有面向单元活性柱的侧面。 虚设图案区域包括防潮结构。