公开(公告)号：US20230275106A1

公开(公告)日：2023-08-31

申请号：US17966576

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hun KIM ,  Jung Bin YUN ,  Seung Joon LEE

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor is provided. The image sensor includes a substrate in which a first photoelectric conversion element is disposed, the substrate having a first surface and a second surface opposite the first surface, pixel separation patterns extending from the first surface of the substrate into the substrate, surrounding the first photoelectric conversion element, and defining a first pixel region in the substrate, a first vertical gate structure which extends in the first pixel region from the first surface of the substrate into the substrate and comprises a first portion disposed in the substrate and a second portion disposed on the first surface of the substrate, a second vertical gate structure which extends in the first pixel region from the first surface of the substrate into the substrate and comprises a first portion disposed in the substrate and a second portion disposed on the first surface of the substrate.

公开(公告)号：US20240194704A1

公开(公告)日：2024-06-13

申请号：US18535076

申请日：2023-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Joon LEE

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor includes a substrate including first and second surfaces opposite to each other in a first direction; pixels each including a photoelectric conversion area in the substrate; and a transfer gate electrode overlapping the photoelectric conversion area of one pixel of the plurality of pixels in the first direction. The substrate contains impurities of a first conductivity type. The photoelectric conversion area contains impurities of a different second conductivity type. The transfer gate electrode includes first, second and third extensions extending from the first surface into the substrate and having respective a first, second, and third depths. The first depth is larger than each of the second and third depths. A bottom surface of the first extension is in the photoelectric conversion area. Each of the bottom surfaces of the second and third extensions is spaced apart from the photoelectric conversion area in the first direction.

公开(公告)号：US20220005153A1

公开(公告)日：2022-01-06

申请号：US17279182

申请日：2019-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjun LIM ,  Suk Ju KANG ,  Sung In CHO ,  Youngsu MOON ,  Seung Joon LEE

IPC: G06T3/40 ,  H04N19/176 ,  H04N19/59

Abstract: Disclosed is an image processing device. The image processing device includes an input unit, and a processor which retargets an image frame input through the input unit and acquires an output image frame, wherein the processor identifies an area, in which pixel values are to be padded, on the basis of the input image frame and information about the output image frame, identifies a first pixel block on the basis of a target pixel area included in the identified area, identifies a second pixel block on the basis of pixel values included in the first pixel block, and pads the target pixel area on the basis of pixel values included in the second pixel block, so as to able to acquire the output image frame.