公开(公告)号：US20190230302A1

公开(公告)日：2019-07-25

申请号：US16122215

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung wook LIM ,  Sung Soo CHOI ,  Eun Sub SHIM ,  Jung Bin YUN ,  Sung-Ho CHOI

IPC: H04N5/359 ,  H01L27/146

Abstract: An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.

公开(公告)号：US20240274638A1

公开(公告)日：2024-08-15

申请号：US18648814

申请日：2024-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20200168644A1

公开(公告)日：2020-05-28

申请号：US16775519

申请日：2020-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho ChOI

IPC: H01L27/146

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20230275106A1

公开(公告)日：2023-08-31

申请号：US17966576

申请日：2022-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hun KIM ,  Jung Bin YUN ,  Seung Joon LEE

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor is provided. The image sensor includes a substrate in which a first photoelectric conversion element is disposed, the substrate having a first surface and a second surface opposite the first surface, pixel separation patterns extending from the first surface of the substrate into the substrate, surrounding the first photoelectric conversion element, and defining a first pixel region in the substrate, a first vertical gate structure which extends in the first pixel region from the first surface of the substrate into the substrate and comprises a first portion disposed in the substrate and a second portion disposed on the first surface of the substrate, a second vertical gate structure which extends in the first pixel region from the first surface of the substrate into the substrate and comprises a first portion disposed in the substrate and a second portion disposed on the first surface of the substrate.

公开(公告)号：US20220293645A1

公开(公告)日：2022-09-15

申请号：US17826708

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

IPC: H01L27/146

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20170207259A1

公开(公告)日：2017-07-20

申请号：US15405451

申请日：2017-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20150116565A1

公开(公告)日：2015-04-30

申请号：US14496445

申请日：2014-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seoung Hyun KIM ,  Mun Hwan KIM ,  Chan Hyung KIM ,  Jung Bin YUN ,  Young Gu JIN ,  Seung Won CHA

IPC: H04N5/374

CPC classification number: H04N5/37457 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H04N9/045

Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

Abstract translation: 根据示例实施例的图像传感器包括第一行中的第一像素和第二像素。 第一像素包括在半导体衬底中的第一深度处的第一光电转换元件，并且第一光电转换元件被配置为将第一可见光光谱转换为第一光电荷，并且第二像素包括第二光电转换元件 所述第二光电转换元件与所述第一光电转换元件在垂直方向上至少部分地重叠，并且所述第二光电转换元件被配置为将第二可见光光谱转换为第二光可变光谱， 照片费。

公开(公告)号：US20140015932A1

公开(公告)日：2014-01-16

申请号：US13940419

申请日：2013-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Joo KIM ,  Doo Cheol PARK ,  Yoon Dong PARK ,  Jung Bin YUN ,  Kwang Min LEE

IPC: H04N13/02

CPC classification number: H04N13/257 ,  H01L27/14621 ,  H01L27/1464

Abstract: A 3D image sensor includes a first color filter configured to pass wavelengths of a first region of visible light and wavelengths of infrared light; a second color filter configured to pass wavelengths of a second region of visible light and the wavelengths of infrared light; and an infrared sensor configured to detect the wavelengths of infrared light passed through the first color filter.

Abstract translation: 3D图像传感器包括被配置为通过可见光的第一区域和红外光的波长的波长的第一滤色器; 第二滤色器，被配置为通过第二可见光区域和红外光的波长的波长; 以及被配置为检测通过第一滤色器的红外光的波长的红外传感器。

公开(公告)号：US20240031698A1

公开(公告)日：2024-01-25

申请号：US18112132

申请日：2023-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonchul CHOI ,  Kyungho LEE ,  Heesang KWON ,  Seoyun PARK ,  Jung Bin YUN

IPC: H04N25/704 ,  H04N25/78 ,  H04N25/77

CPC classification number: H04N25/704 ,  H04N25/78 ,  H04N25/77 ,  H04N25/134

Abstract: An image sensor according to the present disclosure includes: a first pixel group, which includes a first pixel unit corresponding to a first color, and a plurality of first pixels arranged with an m×n form. The image sensor further includes a second pixel unit, which corresponds to a second color, and a plurality of second pixels arranged with the m×n form. The image sensor further includes a third pixel unit, which corresponds to a third color, and a plurality of third pixels arranged with the m×n form, and m and n are natural numbers greater than or equal to 3. A first micro lens is formed on the first pixel unit and shared by at least two adjacent first pixels in a first direction among the plurality of first pixels.

公开(公告)号：US20230144373A1

公开(公告)日：2023-05-11

申请号：US17984086

申请日：2022-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanwoong KIM ,  Jihun KIM ,  Jung Bin YUN ,  Seungjoon LEE ,  Hongsuk LEE

IPC: H04N5/3745 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/3745 ,  H04N5/378 ,  H01L27/1463

Abstract: A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.