公开(公告)号：US20210098479A1

公开(公告)日：2021-04-01

申请号：US16893524

申请日：2020-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghwan SON ,  Boyoung LEE ,  Seoungwon LEE ,  Seunghwan LEE

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/06

Abstract: A vertical non-volatile memory device includes a stack body including gate patterns and interlayer insulating patterns stacked in a stacking direction, the stack body having a through hole, which extends in the stacking direction, in the gate patterns and in the interlayer insulating patterns; a semiconductor pillar in the through hole and extending in the stacking direction; data storage structures between the gate patterns and the semiconductor pillar in the through hole, the data storage structures including charge storage layers; and dummy charge storage layers on a sidewall of the interlayer insulating patterns toward the semiconductor pillar in the through hole.