SEMICONDUCTOR MEMORY DEVICE
    5.
    发明申请

    公开(公告)号:US20250126801A1

    公开(公告)日:2025-04-17

    申请号:US18732848

    申请日:2024-06-04

    Abstract: The present disclosure relates to semiconductor memory devices. An example semiconductor memory device includes a cell region and a peripheral circuit region electrically connected with the cell region. The cell region includes a plurality of gate electrodes spaced apart from each other and stacked in a vertical direction, and a channel structure extending through the plurality of gate electrodes in the vertical direction. The peripheral circuit region includes a substrate, a first element isolation structure, a first gate structure on the first active region, a second element isolation structure, a second gate structure on the second active region, a third element isolation structure, and a third gate structure on the third active region. The third element isolation structure includes a first element isolation pattern and a second element isolation pattern. The first element isolation pattern and the second element isolation pattern include different materials from each other.

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