IMAGE SENSOR AND METHOD OF FORMING THE SAME
    1.
    发明申请
    IMAGE SENSOR AND METHOD OF FORMING THE SAME 有权
    图像传感器及其形成方法

    公开(公告)号:US20140239362A1

    公开(公告)日:2014-08-28

    申请号:US14182829

    申请日:2014-02-18

    CPC classification number: H01L27/14612 H01L27/1463 H01L27/1464 H01L27/14689

    Abstract: An image sensor includes a substrate having a first surface opposing a second surface and a plurality of pixel regions. A photoelectric converter is included in each of the pixel regions, and a gate electrode is formed on the photoelectric converter. Also, a pixel isolation region isolates adjacent pixel regions. The pixel isolation region includes a first isolation layer coupled to a channel stop region. The channel stop region may include an impurity-doped region.

    Abstract translation: 图像传感器包括具有与第二表面相对的第一表面和多个像素区域的基板。 在每个像素区域中包括光电转换器,并且在光电转换器上形成栅电极。 此外,像素隔离区隔离相邻像素区域。 像素隔离区域包括耦合到通道停止区域的第一隔离层。 通道停止区域可以包括杂质掺杂区域。

    IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230420477A1

    公开(公告)日:2023-12-28

    申请号:US18367683

    申请日:2023-09-13

    Abstract: An image sensor with improved performance, and a method of fabricating the same are provided. The image sensor includes a sensor array region and a pad region, which is disposed outside the sensor array region, the image sensor comprising a first substrate including a first surface, upon which light is incident, and a second surface, which is opposite to the first surface, a first isolation film in the first substrate at the sensor array region, the first isolation film defining a plurality of unit pixels, a second substrate including a third surface, which faces the second surface of the first substrate, and a fourth surface, which is opposite to the third surface, a wiring structure between the second and third surfaces, the wiring structure including an interlayer insulating film and a wiring in the interlayer insulating film, a pad trench in the pad region, the pad trench exposing the wiring through the first substrate, a bonding terminal in the pad trench, the bonding terminal being connected to the wiring, and a second isolation film in the first substrate at the pad region, the second isolation film being adjacent to the pad trench, wherein widths of each of the first and second isolation films decrease in a direction from the second surface to the first surface.

    IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210242267A1

    公开(公告)日:2021-08-05

    申请号:US17007332

    申请日:2020-08-31

    Abstract: An image sensor with improved performance, and a method of fabricating the same are provided. The image sensor includes a sensor array region and a pad region, which is disposed outside the sensor array region, the image sensor comprising a first substrate including a first surface, upon which light is incident, and a second surface, which is opposite to the first surface, a first isolation film in the first substrate at the sensor array region, the first isolation film defining a plurality of unit pixels, a second substrate including a third surface, which faces the second surface of the first substrate, and a fourth surface, which is opposite to the third surface, a wiring structure between the second and third surfaces, the wiring structure including an interlayer insulating film and a wiring in the interlayer insulating film, a pad trench in the pad region, the pad trench exposing the wiring through the first substrate, a bonding terminal in the pad trench, the bonding terminal being connected to the wiring, and a second isolation film in the first substrate at the pad region, the second isolation film being adjacent to the pad trench, wherein widths of each of the first and second isolation films decrease in a direction from the second surface to the first surface.

    DEVICE OF GENERATING REFERENCE VOLTAGES FOR MULTI-LEVEL SIGNALING AND MEMORY SYSTEM INCLUDING THE SAME

    公开(公告)号:US20230386526A1

    公开(公告)日:2023-11-30

    申请号:US18151784

    申请日:2023-01-09

    CPC classification number: G11C5/147 H04L25/4917

    Abstract: A reference voltage generation device includes a noise information generation circuit configured to generate power noise information based on a first power noise and a second power noise, the first power noise and the second power noise generated based on a first power and a second power supplied to a first electronic device and propagated from the first electronic device to a second electronic device through a communication line, and the first electronic device and the second electronic device configured to perform data communication using a multi-level signaling scheme. The device includes a reference voltage generation circuit configured to generate three or more reference voltages for the multi-level signaling scheme based on the power noise information, and the second electronic device is configured to use the three or more reference voltages.

    IMAGE SENSOR
    6.
    发明申请

    公开(公告)号:US20210168336A1

    公开(公告)日:2021-06-03

    申请号:US17170008

    申请日:2021-02-08

    Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.

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