公开(公告)号：US20230386526A1

公开(公告)日：2023-11-30

申请号：US18151784

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon KIM ,  SungYong Cho

IPC: G11C5/14 ,  H04L25/49

CPC classification number: G11C5/147 ,  H04L25/4917

Abstract: A reference voltage generation device includes a noise information generation circuit configured to generate power noise information based on a first power noise and a second power noise, the first power noise and the second power noise generated based on a first power and a second power supplied to a first electronic device and propagated from the first electronic device to a second electronic device through a communication line, and the first electronic device and the second electronic device configured to perform data communication using a multi-level signaling scheme. The device includes a reference voltage generation circuit configured to generate three or more reference voltages for the multi-level signaling scheme based on the power noise information, and the second electronic device is configured to use the three or more reference voltages.