公开(公告)号：US20130205075A1

公开(公告)日：2013-08-08

申请号：US13756784

申请日：2013-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moshe TWITTO ,  Rutie ADAR ,  Shay LANDIS

IPC: G11C16/26 ,  G06F12/02 ,  G11C16/34

CPC classification number: G11C16/26 ,  G06F12/0246 ,  G11C5/141 ,  G11C11/5621 ,  G11C11/5671 ,  G11C16/3431 ,  G11C16/3459

Abstract: There is provided a nonvolatile memory device including a memory cell array including nonvolatile memory cells, a battery not supplied with external power and configured to store a charged voltage, a sensing unit configured to sense a degradation state of the nonvolatile memory cells of the memory cell array, and a trigger circuit configured to transmit a refresh trigger signal based on the sensing result, wherein the nonvolatile memory cells of the memory cell array are refreshed using the charged voltage provided by the battery in response to the trigger signal transmitted from the trigger circuit.

Abstract translation: 提供一种包括非易失性存储单元的存储单元阵列，未被提供外部电源并被配置为存储充电电压的电池的非易失性存储器件，被配置为感测存储单元的非易失性存储单元的劣化状态的感测单元 阵列和触发电路，其被配置为基于所述感测结果发送刷新触发信号，其中所述存储单元阵列的非易失性存储单元响应于从所述触发电路发送的触发信号，使用由所述电池提供的充电电压来刷新 。