公开(公告)号：US20240347589A1

公开(公告)日：2024-10-17

申请号：US18633791

申请日：2024-04-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Youngsoo SONG ,  Suhyeon KIM ,  Rooli CHOI ,  Jihoon PARK

IPC分类号： H01L29/06 ,  H01L27/02 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0649 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor device includes an active region on a substrate and an active pattern extending in a first direction. A device isolation layer surrounds the active pattern. A gate structure extends in a second direction. A source/drain region is on the active pattern. An interlayer insulating layer covers the source/drain region. A contact structure is connected to the source/drain region. A buried conductive structure extends in the first direction, is electrically connected to the contact structure, and passes through the interlayer insulating layer to extend in a third direction. A power delivery structure extends from a lower surface of the substrate towards an upper surface thereof, and is electrically connected to the buried conductive structure. The buried conductive structure includes a body portion extending in the first direction, and an extension portion extending from a region of at least one side surface of the body portion in the second direction.