公开(公告)号：US20240178068A1

公开(公告)日：2024-05-30

申请号：US18383940

申请日：2023-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungju HWANG ,  Shigenobu Maeda ,  Myoungkyu PARK

IPC: H01L21/8234 ,  H01L21/762 ,  H01L27/088

CPC classification number: H01L21/823431 ,  H01L21/76224 ,  H01L21/823481 ,  H01L27/0886

Abstract: A method of manufacturing a semiconductor device includes: forming a plurality of first mandrel patterns at a first mandrel pitch on a substrate; forming a first fin group and a first dummy fin group by patterning the substrate, wherein the first fin group is adjacent to the first dummy fin group in a first direction; and removing the first dummy fin group, wherein the first fin group includes a first fin and a second fin adjacent to each other and arranged at a first fin pitch in the first direction. The first dummy fin group includes a first dummy fin and a second dummy fin adjacent to each other and arranged at the first fin pitch in the first direction. The second fin and the first dummy fin, which is adjacent to the second fin, are arranged at a second fin pitch that is greater than the first fin pitch.