公开(公告)号：US20240145463A1

公开(公告)日：2024-05-02

申请号：US18384677

申请日：2023-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoungil DO ,  Jinwoo JUNG ,  Jooyoung SONG ,  Mijin LEE ,  Chanhee JEON

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L29/7408

Abstract: A device including a silicon controlled rectifier including an anode and a cathode; at least one first transistor connected between the anode and a gate of the silicon controlled rectifier; and a second transistor including a source connected to one from among the cathode or the anode, and a drain connected to a body of the at least one first transistor.

公开(公告)号：US20210273179A1

公开(公告)日：2021-09-02

申请号：US16972688

申请日：2019-06-05

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngkyoung JO ,  Hyung Sun KIM ,  Kipo JANG ,  Yongtak YANG ,  Ho Kuk JUNG ,  Dalho HUH ,  Jonghoon KO ,  Jinhyun LUI ,  Mijin LEE ,  Sung-Hyun JUNG ,  Pyeongseok CHO

IPC: H01L51/00 ,  C07D403/10 ,  C09K11/06

Abstract: The present invention relates to a compound, represented by chemical formula 1, for an organic optoelectronic device, a composition, comprising the compound represented by Chemical Formula 1, for an organic optoelectronic device, an organic optoelectronic device, and a display device. The description of Chemical Formula 1 is as defined in the specification.

公开(公告)号：US20240282764A1

公开(公告)日：2024-08-22

申请号：US18443892

申请日：2024-02-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyukhoon KWON ,  Chanhee JEON ,  Kyoungil DO ,  Mijin LEE

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0259 ,  H01L27/0255 ,  H01L27/0288 ,  H02H9/046

Abstract: Provided is a device including a first well having a first conductivity type, a first gate electrode on the first well, a first region and a second region each having a second conductivity type on the first well with the first gate electrode disposed therebetween, a third region having the second conductivity type on the first well, and a fourth region having the first conductivity type on the first well. The first gate electrode and the first region are electrically connected to a first node, and the third region is electrically connected to a second node.