公开(公告)号：US20180158752A1

公开(公告)日：2018-06-07

申请号：US15478252

申请日：2017-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MIN-YOUNG CHOI ,  YOUNG-ROK OH ,  HWI-JONG YOO ,  IL-SOO KIM ,  JOO-YOUNG KIM ,  KI-TAEK LEE ,  EUN-JI YU

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/3677 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/50 ,  H01L25/0655 ,  H01L2224/50

Abstract: A semiconductor storage device includes a circuit substrate. The circuit substrate includes a main body and a connection tab connected to a side of the main body. The a main body includes a first chip mounting region and a second chip mounting region. A first semiconductor chip of a first type is mounted on the first chip mounting region. A second semiconductor chip of a second type is mounted on the second chip mounting region. The first type of the first semiconductor chip is different from the second type of the second semiconductor chip. The circuit substrate further includes a first thermal via in the connection tab and comprising a conductive material.