公开(公告)号：US09245995B2

公开(公告)日：2016-01-26

申请号：US13921412

申请日：2013-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-june Jang ,  Kyu-heon Cho ,  Min-hwan Kim ,  Dong-eun Jang ,  Hoon Chang

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/49 ,  H01L29/08

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/4238 ,  H01L29/4983 ,  H01L29/66681

Abstract: A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity.

Abstract translation: 半导体器件包括：包含半导体衬底的功率金属氧化物半导体（MOS）晶体管，半导体衬底上的杂质区域，具有第一导电性的杂质区域，杂质区域中的漂移区域，具有第一 电导率，与漂移区相邻的杂质区域中的体区，具有不同于第一导电性的第二电导率的体区，漂移区上的漏极延伸绝缘层，顺序地层叠在栅极绝缘层上的栅电极 所述体区的一部分和所述漂移区的一部分，所述漏极延伸绝缘层上的漏极延伸电极，与所述体区的相反侧的所述漂移区的漏极区域，所述漏极区具有所述第一导电性，以及 源区域，源区域具有第二导电性。