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公开(公告)号:US11764087B2
公开(公告)日:2023-09-19
申请号:US16898965
申请日:2020-06-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chaemook Lim , Yeongrack Son , Ohhyuk Kwon , Dongouk Kim , Youngbum Kim , Woohee Kim , Dongjoon Lee , Kwanghyeon Jeong
IPC: H01L21/67 , H01L21/263 , H01L21/02
CPC classification number: H01L21/67248 , H01L21/02255 , H01L21/2636
Abstract: A process apparatus includes a heating module and a supporter disposed below the heating module. A process space is provided between the heating module and the supporter. The heating module includes a housing, at least one heating lamp disposed in the housing, at least one temperature sensor disposed in the housing, and a blocking plate disposed under the housing. The blocking plate spatially separates the at least one heating lamp from the process space, and the blocking plate includes at least one window spatially connecting the at least one temperature sensor to the process space.
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2.
公开(公告)号:US20240347370A1
公开(公告)日:2024-10-17
申请号:US18542172
申请日:2023-12-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongjoon Lee , Kyoungran Kim , Kwanghyeon Jeong , Myeongock Ko , Jaeuk Sim , Seongbeom Lee , Daesung Jung
IPC: H01L21/687 , H01L21/66 , H05F3/06
CPC classification number: H01L21/68742 , H01L22/14 , H05F3/06
Abstract: A carrier dechucking system includes a work carrier including a substrate having a first surface, an opposite second surface with a support film attached, and a ring frame surrounding the substrate. The work carrier is placed on a placement table having a support surface on which a lower surface of the support film is maintained, lifting pins configured to move the work carrier, an ionizer configured to eject ions to the lower surface, and a controller. The controller is configured to control the lifting pins to move the work carrier from the support surface to first and second levels, and to control the ionizer to remove static electricity charged on the support film from the support surface to the first level. At the first level, a surface voltage of the first surface of the substrate is lower than a surface voltage of the lower surface of the support film.
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