VERTICAL NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    VERTICAL NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    垂直非易失性存储器件及其制造方法

    公开(公告)号:US20130279233A1

    公开(公告)日:2013-10-24

    申请号:US13921554

    申请日:2013-06-19

    Abstract: A vertical non-volatile memory device is structured/fabricated to include a substrate, groups of memory cell strings each having a plurality of memory transistors distributed vertically so that the memory throughout multiple layers on the substrate, integrated word lines coupled to sets of the memory transistors, respectively, and stacks of word select lines. The memory transistors of each set are those transistors, of one group of the memory cell strings, which are disposed in the same layer above the substrate. The word select lines are respectively connected to the integrated word lines.

    Abstract translation: 垂直非易失性存储器件被构造/制造成包括衬底,每组具有多个垂直分布的存储器晶体管的存储单元串组,使得衬底上多层的存储器,与存储器组合耦合的集成字线 晶体管和字选择线的堆叠。 每组的存储晶体管是一组存储单元串的晶体管,它们设置在衬底上方的相同层中。 字选择线分别连接到集成字线。

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