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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20150255302A1

    公开(公告)日：2015-09-10

    申请号：US14618024

    申请日：2015-02-10

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： BYOUNG-MOON YOON ,  YOUNG-OK KIM ,  KYUNG-HYUN KIM ,  JU-SEON GOO

    IPC分类号： H01L21/3105 ,  H01L21/02 ,  H01L21/324 ,  H01L21/66

    CPC分类号： H01L21/3247 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/67115 ,  H01L21/6715 ,  H01L22/12 ,  H01L22/20

    摘要： Provided is a method of manufacturing a semiconductor device. The method includes forming an underlying structure on a semiconductor substrate, forming a material layer on the semiconductor substrate having the underlying structure, the material layer including a first region having a first surface disposed at a first height from a surface of the semiconductor substrate and a second region having a second surface disposed at a second height lower than the first height, and planarizing the material layer. The planarization of the material layer includes coating an etchant on the material layer disposed on the semiconductor substrate, and selectively heating the first region of the material layer to increase an etch rate of the first region of the material layer more than an etch rate of the second region of the material layer.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在半导体衬底上形成下面的结构，在具有下面的结构的半导体衬底上形成材料层，该材料层包括第一区域，第一区域具有设置在离半导体衬底表面第一高度的第一表面， 第二区域具有设置在低于第一高度的第二高度处的第二表面，并且平坦化材料层。 材料层的平坦化包括在设置在半导体衬底上的材料层上涂覆蚀刻剂，并且选择性地加热材料层的第一区域以增加材料层的第一区域的蚀刻速率，而不是蚀刻速率 材料层的第二区域。