公开(公告)号：US20150155046A1

公开(公告)日：2015-06-04

申请号：US14554128

申请日：2014-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JI-SANG LEE ,  KI-HWAN CHOI ,  OH-SUK KWON

IPC: G11C16/10 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/08 ,  G11C16/3459

Abstract: A nonvolatile memory device, including a first latch unit and a nonvolatile memory cell, and a method of writing data in a nonvolatile memory device are provided. The method includes receiving a first writing command or a second writing command from outside of the nonvolatile memory device, and writing first data stored in the first latch unit in the nonvolatile memory cell in response to the first or second writing command. The first data is retained in the first latch unit until the writing of the first data stored in the first latch unit in the nonvolatile memory cell is completed.

Abstract translation: 提供了包括第一锁存单元和非易失性存储单元的非易失性存储器件以及将数据写入非易失性存储器件的方法。 该方法包括从非易失性存储装置的外部接收第一写入命令或第二写入命令，以及响应于第一或第二写入命令将存储在第一锁存单元中的第一数据写入非易失性存储单元。 第一数据被保留在第一锁存单元中，直到存储在非易失性存储单元中的第一锁存单元中的第一数据的写入完成。